| 一种完整且精确的化合物半导体HEMT器件大信号模型 |
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| 引用本文： | 刘军,余志平,孙玲玲.一种完整且精确的化合物半导体HEMT器件大信号模型[J].半导体学报,2014,35(3):034010-9. |
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| 作者姓名： | 刘军 余志平 孙玲玲 |
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| 基金项目： | 国家重点基础研究发展计划(973计划）（No.2010CB327403). |
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| 摘 要： | A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOSFET models are inherited. For core model derivation, a novel method is used to realize a direct application of the standard surfacepotentialmodelofMOSFETsforHEMTmodeling,withoutbreakingthemathematicstructure.Thehigh-order derivatives of I–V /C–V remain continuous, making the model suitable for RF large-signal applications. Furthermore, the self-heating effects and the transconductance dispersion are also modelled. The model has been verified through comparison with measured DC IV, Gummel symmetry test, CV, minimum noise figure, small-signal Sparameters up to 66 GHz and single-tone input power sweep at 29 GHz for a 475 m0.1 m InGaAs/GaAs power pHEMT, fabricated at a commercial foundry.
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| 关 键 词： | 大信号模型 HEMT器件 化合物半导体 表面电势 MOSFET 功率pHEMT FET模型 表面电位 |
| 收稿时间： | 8/5/2013 12:00:00 AM |
A complete and accurate surface-potential based large-signal model for compound semiconductor HEMTs |
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| Liu Jun,Yu Zhiping and Sun Lingling.A complete and accurate surface-potential based large-signal model for compound semiconductor HEMTs[J].Chinese Journal of Semiconductors,2014,35(3):034010-9. |
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| Authors: | Liu Jun Yu Zhiping and Sun Lingling |
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| Affiliation: | Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310037, China;Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310037, China;Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310037, China |
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| Abstract: | surface-potential based compound semiconductor HEMTs large-signal model |
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| Keywords: | surface-potential based compound semiconductor HEMTs large-signal model |
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