| 光照对阈值电压均匀性的影响 |
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| 引用本文： | 朱朝嵩,夏冠群,李传海,詹琰.光照对阈值电压均匀性的影响[J].半导体学报,2002,23(2):165-168. |
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| 作者姓名： | 朱朝嵩 夏冠群 李传海 詹琰 |
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| 作者单位： | 1. 中国科学院上海冶金研究所,上海,200050;2. 中国科学院上海冶金研究所,上海,200050;合肥工业大学,合肥,230009 |
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| 基金项目： | 国家自然科学基金;69676003; |
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| 摘 要： | 研究了光照对砷化镓阈值电压均匀性的影响.结果表明光照使耗尽型MESFET器件的沟道电流增大,使阈值电压向负方向增加,并提高了阈值电压的均匀性.研究认为砷化镓单晶材料的深能级缺陷是影响MESFET阈值电压均匀性的重要因素之一,而光照在一定程度上减弱了这一影响.
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| 关 键 词： | 砷化镓 MESFET 光敏效应 阈值电压 |
| 文章编号： | 0253-4177(2002)02-0165-04 |
| 修稿时间： | 2001年5月26日 |
Optical Effect on the Uniformity of MESFET Threshold Voltage |
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| Zhu Chaosong ,Xia Guanqun ,Li Chuanhai , and Zhan Yan.Optical Effect on the Uniformity of MESFET Threshold Voltage[J].Chinese Journal of Semiconductors,2002,23(2):165-168. |
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| Authors: | Zhu Chaosong Xia Guanqun Li Chuanhai and Zhan Yan |
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| Affiliation: | Zhu Chaosong 1,Xia Guanqun 1,Li Chuanhai 1,2 and Zhan Yan 1 |
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| Abstract: | The uniformity of GaAs MESFET threshold voltage is an important parameter for GaAs wafer,especially for digital IC application.The optical effect on the uniformity of MESFET threshold voltage is studied.Results show that optical radiation enhances the drain source current of the GaAs MESFET,and makes the threshold voltage to move toward negative direction.The optical radiation also enhances the uniformity of MESFET threshold voltage.Deep level defects is one of the factors that response for the distribution of MESFET threshold voltage.Optical radiation eliminates the effect of deep level defects on MESFET threshold voltage uniformity. |
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| Keywords: | GaAs MESFET photosensitive effect threshold voltage |
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