| Room-temperature electroluminescence of p-ZnxMg（1-x）O：Na/n-ZnO p-n junction light emitting diode |
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| 引用本文： | 叶志镇,张利强,黄靖云,张银珠,朱丽萍,吕斌,吕建国,汪雷,金一政,蒋杰,薛雅,张俊,林时胜,杨丹.Room-temperature electroluminescence of p-ZnxMg（1-x）O：Na/n-ZnO p-n junction light emitting diode[J].半导体学报,2009,30(8):081001-3. |
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| 作者姓名： | 叶志镇 张利强 黄靖云 张银珠 朱丽萍 吕斌 吕建国 汪雷 金一政 蒋杰 薛雅 张俊 林时胜 杨丹 |
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| 作者单位： | State;Laboratory;Silicon;Materials;Department;Zhejiang;University; |
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| 基金项目： | supported by the State Key Development Program for Basic Research of China (No.2006CB604906);;the National Natural Science Foundation of China (No.50532060) |
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| 摘 要： | p-ZnxMg1-xO：Na/n-ZnO p-n junction light emitting diode （LED） was produced on n-ZnO （0001） single-crystal substrate using pulsed laser deposition. The realization of band gap engineering was achieved by the incor-poration of Mg in ZnO layers and was confirmed by photoluminescence spectrum. The p-type ZnxMg1-xO：Na film with low resistance was obtained at 500 ℃ and in which, Na has taken effect evidenced by Hall and X-ray photo-electron spectroscopy measurements. The current-voltage curve of LED showed a rectifying behavior and obvious electroluminescence was realized by feeding a direct current up to 40 mA. Furthermore, its structural and electric characters are discussed as well.
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| 关 键 词： | 发光二极管 电致发光 氧化锌 pn结 钠 室温 脉冲激光沉积 光致发光光谱 |
Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode |
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| Ye Zhizhen,Zhang Liqiang,Huang Jingyun,Zhang Yinzhu,Zhu Liping,Lti Bin,Lu Jianguo,Wang Lei,Jin Yizheng,Jiang Jie,Xue Ya,Zhang Jun,Lin Shisheng,and Yang Dan.Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode[J].Chinese Journal of Semiconductors,2009,30(8):081001-3. |
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| Authors: | Ye Zhizhen Zhang Liqiang Huang Jingyun Zhang Yinzhu Zhu Liping Lti Bin Lu Jianguo Wang Lei Jin Yizheng Jiang Jie Xue Ya Zhang Jun Lin Shisheng and Yang Dan |
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| Affiliation: | State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, China;State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, China;State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, China;State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, China;State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, China;State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, China;State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, China;State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, China;State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, China;State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, China;State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, China;State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, China;State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, China |
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| Abstract: | ZnO electroluminescence Na doped LED |
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| Keywords: | ZnO electroluminescence Na doped LED |
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