| 大分子螯合剂在低压力低磨料条件下铜膜的化学机械抛光中的应用 |
| |
| 引用本文： | 李炎,刘玉岭,牛新环,卜小峰,李洪波,唐继英,樊世燕.大分子螯合剂在低压力低磨料条件下铜膜的化学机械抛光中的应用[J].半导体学报,2014,35(1):016001-5. |
| |
| 作者姓名： | 李炎 刘玉岭 牛新环 卜小峰 李洪波 唐继英 樊世燕 |
| |
| 基金项目： | 国家重大科技专项（2009zx02308），河北省自然科学基金（E2013202247），和河北省教育厅基金（2011128） |
| |
| 摘 要： | The mechanism of the FA/O chelating agent in the process of chemical mechanical polishing （CMP） is introduced. CMP is carried on a φ300 mm copper film. The higher polishing rate and lower surface roughness are acquired due to the action of an FA/O chelating agent with an extremely strong chelating ability under the condition of low pressure and low abrasive concentration during the CMP process. According to the results of several kinds of additive interaction curves when the pressure is 13.78 kPa, flow rate is 150 mL/min, and the rotating speed is 55/60 rpm, it can be demonstrated that the FA/O chelating agent plays important role during the CMP process.
|
| 关 键 词： | 高分子螯合剂 化学机械抛光 磨料浓度 低压力 铜膜 应用 表面粗糙度 CMP |
| 修稿时间： | 8/1/2013 12:00:00 AM |
Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration |
| |
| Li Yan,Liu Yuling,Niu Xinhuan,Bu Xiaofeng,Li Hongbo,Tang Jiying and Fan Shiyan.Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration[J].Chinese Journal of Semiconductors,2014,35(1):016001-5. |
| |
| Authors: | Li Yan Liu Yuling Niu Xinhuan Bu Xiaofeng Li Hongbo Tang Jiying and Fan Shiyan |
| |
| Affiliation: | Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Tianfang Limited Company of Detection Technology, Guangdong, Dongguan 523160, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China; |
| |
| Abstract: | FA/O chelating agent more hydroxyl amine low pressure and low concentration of abrasive copperCMP surface roughness |
| |
| Keywords: | FA/O chelating agent more hydroxyl amine low pressure and low concentration of abrasive copper CMP surface roughness |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
