| X 波段氮化镓合成固态放大器 |
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| 引用本文： | 陈炽,郝跃,冯辉,杨林安,马晓华,段焕涛,胡仕刚.X 波段氮化镓合成固态放大器[J].半导体学报,2009,30(9):095001-5. |
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| 作者姓名： | 陈炽 郝跃 冯辉 杨林安 马晓华 段焕涛 胡仕刚 |
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| 摘 要： | Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.
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| 关 键 词： | 固态功率放大器 氮化镓 X波段 功率放大器模块 HEMT器件 功率耦合器 直流偏置电路 直流电源 |
| 收稿时间： | 4/1/2009 11:02:09 PM |
| 修稿时间： | 4/1/2009 11:02:09 PM |
An X-band GaN combined solid-state power amplifier |
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| Chen Chi,Hao Yue,Feng Hui,Yang Linan,Ma Xiaohu,Duan Huantao and Hu Shigang.An X-band GaN combined solid-state power amplifier[J].Chinese Journal of Semiconductors,2009,30(9):095001-5. |
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| Authors: | Chen Chi Hao Yue Feng Hui Yang Linan Ma Xiaohu Duan Huantao and Hu Shigang |
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| Affiliation: | Key Laboratory of Wide Band-Gap Semiconductor Materials and Device, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Device, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Device, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Device, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Device, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Device, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Device, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | AlGaN/GaN HEMT solid-state power amplifiers output power gain compression power added efficiency |
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| Keywords: | AlGaN/GaN HEMT solid-state power amplifiers output power gain compression power added efficiency |
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