首页 | 本学科首页   官方微博 | 高级检索  
     

静电感应晶闸管沟道载流子分布的物理效应
引用本文:刘春娟,汪再兴,王永顺.静电感应晶闸管沟道载流子分布的物理效应[J].半导体学报,2014,35(8):084005-5.
作者姓名:刘春娟  汪再兴  王永顺
摘    要:The physical effects of the carrier distribution in the channel on the dynamical performance of a static induction thyristor (SITH) have been studied numerically and experimentally. The analytical expressions of the minority carrier distribution in the channel of the SITH were also derived and the space charge distribution control- ling mechanism on the current of the SITH under high level injection have been analyzed deeply. The relationships among the minority carrier distribution, potential distribution, I-V characteristics and transient performances of the SITH are revealed.

关 键 词:静电感应晶闸管  载流子分布  物理效应  信道  解析表达式  动力性能  数值模拟  SITH

Physical effect of carrier distribution in the channel of static induction thyristor
Liu Chunjuan,Wang Zaixing and Wang Yongshun.Physical effect of carrier distribution in the channel of static induction thyristor[J].Chinese Journal of Semiconductors,2014,35(8):084005-5.
Authors:Liu Chunjuan  Wang Zaixing and Wang Yongshun
Affiliation:College of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China;College of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China;College of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China
Abstract:The physical effects of the carrier distribution in the channel on the dynamical performance of a static induction thyristor (SITH) have been studied numerically and experimentally. The analytical expressions of the minority carrier distribution in the channel of the SITH were also derived and the space charge distribution controlling mechanism on the current of the SITH under high level injection have been analyzed deeply. The relationships among the minority carrier distribution, potential distribution, I -V characteristics and transient performances of the SITH are revealed.
Keywords:static induction thyristor  carrier distribution  potential barrier  space charge distribution
本文献已被 维普 万方数据 等数据库收录!
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号