| 用于太赫兹InP基PHEMTs 1~110GHz全频段在片测试的系统校准方法的对比研究 |
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| 引用本文： | 王志明,黄辉,胡志富,赵卓彬,王旭东,罗晓斌,刘军,杨宋源.用于太赫兹InP基PHEMTs 1~110GHz全频段在片测试的系统校准方法的对比研究[J].半导体学报,2015,36(6):064006-4. |
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| 作者姓名： | 王志明 黄辉 胡志富 赵卓彬 王旭东 罗晓斌 刘军 杨宋源 |
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| 基金项目： | 国家自然科学基金 (Grant No.61275107) |
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| 摘 要： | 本文分别采用Multiline-TRL (Thru-Reflect-Line)和LRM (Line-Reflect-Match) 在片系统校准方法，与传统的SOLT (Short-Open-Load-Thru) 校准方法在InP基PHEMTs片上S参数测试方面进行定量的对比。首次在70 KHz~110 GHz全频段实现一次校准，减小了传统的分段测试多次校准带来的系统误差，校准更加方便简单。对比结果表明，基于Multiline-TRL校准和LRM校准后测量的S参数一致，且均优于传统的SOLT校准方法，尤其是在高频段结果更加准确。首次基于拐点进行外推，且器件展现了优良的射频特性，包括最大电流增益截止频率ft= 247 GHz，最大振荡频率fmax= 392 GHz，其准确度高于传统的基于无拐点进行的外推。首次基于LRM校准测得器件的1~110 GHz全频段S参数，建立了器件的1~110 GHz全频段小信号模型，而非基于传统的通过低频测试数据外推获得。
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| 关 键 词： | on-wafer calibration scattering parameters PHEMTs small-signal model |
Comparison of on-wafer calibrations for THz InP-based PHEMTs applications |
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| Wang Zhiming,Huang Hui,Hu Zhifu,Zhao Zhuobin,Wang Xudong,Luo Xiaobin,Liu Jun and Yang Songyuan.Comparison of on-wafer calibrations for THz InP-based PHEMTs applications[J].Chinese Journal of Semiconductors,2015,36(6):064006-4. |
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| Authors: | Wang Zhiming Huang Hui Hu Zhifu Zhao Zhuobin Wang Xudong Luo Xiaobin Liu Jun and Yang Songyuan |
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| Affiliation: | 1. Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology, Beijing 100081, China;2. National Institute of Metrology, Beijing 100029, China;3. Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;4. Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology, Beijing 100081, China;Hebei Semiconductor Research Institute, Shijiazhuang 050051, China |
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| Abstract: | A quantitative comparison of multiline TRL (thru-reflect-line) and LRM (line-reflect-match) on-wafer calibrations for scattering parameters (S-parameters) measurement of InP-based PHEMTs is presented. The comparison is undertaken for the first time and covers a frequency range from 70 kHz to 110 GHz. It is demonstrated that the accuracy of multiline TRL and LRM calibration is in good agreement. Both methods outperform the conventional SOLT calibration in the full frequency band up to 110 GHz. Then the excellent RF performance is obtained by extrapolation on the basis of inflection point, including a maximum current gain cut-off frequency ft of 247 GHz and a maximum oscillation frequency fmax of 392 GHz. The small-signal model based on LRM calibration is established as well. The S-parameters of the model are consistent with the measured from 1 to 110 GHz. |
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| Keywords: | on-wafer calibration scattering parameters PHEMTs small-signal model |
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