| 蓝宝石衬底上输出功率密度为4.69W/mm的InAlN/GaN HEMT |
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| 引用本文： | 刘波,冯志红,张森,敦少博,尹甲运,李佳,王晶晶,张效帏,房玉龙,蔡树军. 蓝宝石衬底上输出功率密度为4.69W/mm的InAlN/GaN HEMT[J]. 半导体学报, 2011, 32(12): 124003-4 |
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| 作者姓名： | 刘波 冯志红 张森 敦少博 尹甲运 李佳 王晶晶 张效帏 房玉龙 蔡树军 |
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| 作者单位： | 中国电子科技集团公司第十三研究所 |
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| 基金项目： | 国家自然科学基金项目（面上项目，重点项目，重大项目） |
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| 摘 要： | We report high performance InAlN/GaN HEMTs grown on sapphire substrates. The lattice-matched InAlN/GaN HEMT sample showed a high 2DEG mobility of 1210 cm2/(V·s) under a sheet density of 2.6 × 1013 cm-2. Large signal load-pull measurements for a (2 × 100 μm) × 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz. The presented results confirm the high performances reachable by InAlN-based technology with an output power density of 4.69 W/mm, a linear gain of 11.8 dB and a peak power-added efficiency of 48%. This is the first report of high performance InAlN/GaN HEMTs in mainland China.
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| 关 键 词： | 铟铝氮/氮化镓，高电子迁移率晶体管，输出功率密度，金属有机化学气相沉积， |
| 修稿时间： | 2011-06-21 |
A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate |
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| Liu Bo,Feng Zhihong,Zhang Sen,Dun Shaobo,Yin Jiayun,Li Ji,Wang Jingjing,Zhang Xiaowei,Fang Yulong and Cai Shujun. A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate[J]. Chinese Journal of Semiconductors, 2011, 32(12): 124003-4 |
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| Authors: | Liu Bo Feng Zhihong Zhang Sen Dun Shaobo Yin Jiayun Li Ji Wang Jingjing Zhang Xiaowei Fang Yulong Cai Shujun |
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| Affiliation: | Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China |
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| Abstract: | |
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| Keywords: | InAlN/GaN HEMT output power density metal-organic chemical vapor deposition |
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