| 一种获得四管CMOS图像传感器像素夹断电压的方法 |
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| 引用本文： | 李斌桥,于俊庭,徐江涛,于平平.一种获得四管CMOS图像传感器像素夹断电压的方法[J].半导体学报,2010,31(7):074010-4. |
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| 作者姓名： | 李斌桥 于俊庭 徐江涛 于平平 |
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| 摘 要： | 提出了一种测试四管CMOS图像传感器像素夹断电压的方法。该方法是基于像素中势阱结构的变化能够对图像信号散粒噪声产生影响的假设。实验结果测得的夹断电压与理论预测相一致。该技术提供的实验方法不仅能够帮助设计四管CMOS图像传感器光电二极管的结构，而且也能优化像素生产工艺。
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| 关 键 词： | CMOS图像传感器 夹断电压 像素 光电二极管 散粒噪声 图像信号 制造工艺 优化设计 |
| 修稿时间： | 3/25/2010 2:42:17 PM |
An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor |
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| Li Binqiao,Yu Junting,Xu Jiangtao and Yu Pingping.An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor[J].Chinese Journal of Semiconductors,2010,31(7):074010-4. |
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| Authors: | Li Binqiao Yu Junting Xu Jiangtao and Yu Pingping |
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| Affiliation: | School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China;School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China;School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China;School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China |
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| Abstract: | An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented. This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well structure change of pixel. Experimental results show the measured pinch-off voltage is consistent with theoretical prediction. This technique provides an experimental method to assist the optimization of pixel design in both the photodiode structure and fabrication process for the 4-T CMOS image sensor. |
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| Keywords: | pinch-off voltage CMOS image sensor photon shot noise pixel design |
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