| 掺氮ZnO薄膜的光电特性及其薄膜晶体管研究 |
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| 引用本文： | 朱夏明,吴惠桢,王双江,张莹莹,蔡春锋,斯剑霄,原子健,杜晓阳,董树荣.掺氮ZnO薄膜的光电特性及其薄膜晶体管研究[J].半导体学报,2009,30(3):033001-4. |
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| 作者姓名： | 朱夏明 吴惠桢 王双江 张莹莹 蔡春锋 斯剑霄 原子健 杜晓阳 董树荣 |
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| 作者单位： | Department;Physics;Zhejiang;University;State;Laboratory;Modern;Optical;Instrumentations;Institute;Microelectronics;Photoelectronics; |
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| 摘 要： | Using NH3 as nitrogen source gas, N-doped ZnO （ZnO：N） thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature. The ZnO：N thin films display significant increase of resistivity and decrease of photoluminescence intensity. As-grown ZnO：N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.
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| 关 键 词： | 薄膜晶体管 氮掺杂 电学性能 制造 ZnO 射频磁控溅射法 光学 场效应晶体管 |
| 修稿时间： | 9/29/2008 3:10:48 PM |
Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors |
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| Zhu Xiaming,Wu Huizhen,Wang Shuangjiang,Zhang Yingying,Cai Chunfeng,Si Jianxiao,Yuan Zijian,Du Xiaoyang and Dong Shurong.Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors[J].Chinese Journal of Semiconductors,2009,30(3):033001-4. |
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| Authors: | Zhu Xiaming Wu Huizhen Wang Shuangjiang Zhang Yingying Cai Chunfeng Si Jianxiao Yuan Zijian Du Xiaoyang and Dong Shurong |
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| Affiliation: | Department of Physics, Zhejiang University, Hangzhou 310027, China;Department of Physics, Zhejiang University, Hangzhou 310027, China; State Key Laboratory of Modern Optical Instrumentations, Zhejiang University, Hangzhou 310027, China;Department of Physics, Zhejiang University, Hangzhou 310027, China;Department of Physics, Zhejiang University, Hangzhou 310027, China;Department of Physics, Zhejiang University, Hangzhou 310027, China;Department of Physics, Zhejiang University, Hangzhou 310027, China;Department of Physics, Zhejiang University, Hangzhou 310027, China;ESD Laboratory, Institute of Microelectronics and Photoelectronics, Zhejiang University, Hang Zhou 310027, China;ESD Laboratory, Institute of Microelectronics and Photoelectronics, Zhejiang University, Hang Zhou 310027, China |
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| Abstract: | Using NH3as nitrogen source gas, N-doped ZnO (ZnO:N) thin films inc-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature. The ZnO:N thin films display significant increase of resistivity and decrease of photoluminescence intensity. As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics. |
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| Keywords: | ZnO N-doping resistivity photoluminescence thin film transistors |
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