| 隐埋层中二维效应对全耗尽SOI非对称HALO结构阈值电压的影响 |
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| 引用本文： | 许剑,丁磊,韩郑生,钟传杰.隐埋层中二维效应对全耗尽SOI非对称HALO结构阈值电压的影响[J].半导体学报,2008,29(3):559-562. |
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| 作者姓名： | 许剑 丁磊 韩郑生 钟传杰 |
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| 作者单位： | [1]江南大学信息工程学院,无锡214000 [2]中国科学院微电子研究所,北京100029 |
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| 摘 要： | 在非对称HALO结构的全耗尽SOI二维阈值电压解析模型的基础上,对阈值电压受隐埋层中二维效应的影响进行了讨论.通过与一维模型的比较,说明在深亚微米SOI MOSFET器件中隐埋层的二维效应会导致器件提前出现短沟道效应.新模型结果与二维数值模拟软件MEDICI吻合较好.
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| 关 键 词： | 阈值电压 二维效应 全耗尽SOI HALO结构 |
| 文章编号： | 0253-4177(2008)03-0559-04 |
| 收稿时间： | 10/8/2007 8:54:23 AM |
| 修稿时间： | 2007年10月8日 |
Impact of Two-Dimension Effects on Threshold Voltage of Fully Depleted SOI MOSFETs with Asymmetric Halos |
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| Xu Jian,Ding Lei,Han Zhengsheng and Zhong Chuanjie.Impact of Two-Dimension Effects on Threshold Voltage of Fully Depleted SOI MOSFETs with Asymmetric Halos[J].Chinese Journal of Semiconductors,2008,29(3):559-562. |
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| Authors: | Xu Jian Ding Lei Han Zhengsheng and Zhong Chuanjie |
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| Affiliation: | School of Information Technology,Southern Yangtze University,Wuxi 214000,China;School of Information Technology,Southern Yangtze University,Wuxi 214000,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;School of Information Technology,Southern Yangtze University,Wuxi 214000,China |
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| Abstract: | Based on an analytical threshold voltage model of fully depleted silicon-on-insulator (SOI) MOSFETs with asymmetric HALO structures,the impact of the two-dimension effects in a buried-oxide layer on threshold voltage is discussed.Compared to the 1D model,two-dimensional effects in the buried-oxide layer of the deep submicron MOSFET device create the short-channel effect more quickly.The predictions of the new model are in good agreement with those of the two-dimension numerical simulator MEDICI. |
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| Keywords: | threshold voltage two-dimension effects fully depleted SOI HALO structure |
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