| fmax大于100GHz的AlGaN背势垒结构InAlN-GaN HEMT研究 |
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| 引用本文： | 刘波.fmax大于100GHz的AlGaN背势垒结构InAlN-GaN HEMT研究[J].半导体学报,2013,34(4):044006-4. |
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| 作者姓名： | 刘波 |
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| 作者单位： | 中国电子科技集团公司第十三研究所 |
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| 基金项目： | 国家自然科学基金项目（面上项目，重点项目，重大项目） |
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| 摘 要： | We report the DC and RF performance of InAlN/GaN high-electron mobility transistors with AlGaN back barrier grown on SiC substrates.These presented results confirm the high performance that is reachable by InAlN-based technology.The InAlN/GaN HEMT sample showed a high 2DEG mobility of 1550 cm2/（V·s） at a 2DEG density of 1.7×1013 cm-2.DC and RF measurements were performed on the unpassivated device with 0.2μm "T" gate.The maximum drain current density at VGS = 2 V is close to 1.05 A/mm in a reproducible way. The reduction in gate leakage current helps to increase the frequency performance of AIGaN back barrier devices. The power gain cut-off frequency of a transistor with an AIGaN back barrier is 105 GHz,which is much higher than that of the device without an AIGaN back barrier at the same gate length.These results indicate InAlN/GaN HEMT is a promising candidate for millimeter-wave application.
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| 关 键 词： | AlGaN back barrier InAlN high-electron-mobility transistors power gain cutoff frequency |
An Extrinsic fmax> 100 GHz InAlN/GaN HEMT with AlGaN Back Barrier |
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| liu bo.An Extrinsic fmax> 100 GHz InAlN/GaN HEMT with AlGaN Back Barrier[J].Chinese Journal of Semiconductors,2013,34(4):044006-4. |
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| Authors: | liu bo |
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| Affiliation: | Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China |
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| Abstract: | |
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| Keywords: | AlGaN back barrier InAlN high-electron-mobility transistors power gain cutoff frequency |
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