表面态密度分布和源漏电阻对6H-SiC PMOS器件特性的影响

建立了一个价带附近的界面态密度分布模型,并用该模型较好地模拟了6H-SiC PMOS器件的阈值电压随温度变化的趋势、C-V特性以及转移特性.理论C-V特性曲线是用数值解泊松方程的方法得到的,在解泊松方程的过程中考虑了场致离化效应.由于SiC PMOS器件的源漏电阻比较大,因此,在计算强反型情况下的漏电流时,同时考虑了源漏电阻的影响.结果表明,源漏电阻对漏电流的影响很大.

Effect of Surface State and S/D Resistance on Characteristics of 6H-SiC PMOSFET

A m odel of the interface state density distribution near by valence band is presented.The dependence of the thresh- old voltage on temperature,C- V characteristics and the transfer characteristics for 6 H - Si C PMOS devices is predicted exactly with this m odel.Theoretical C- V curve is obtained by calculating the Poisson equation num erically considering the effects of field- induced ionization.The sheet resistances and contact resistances for p+- type Si C source/drain region are significantly high,so they m ust be considered when the drain current in strong inversion is calculated.