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An ultra-low-power area-efficient non-volatile memory in a 0.18 μ m single-poly CMOS process for passive RFID tags
Authors:Jia Xiaoyun  Feng Peng  Zhang Shengguang  Wu Nanjian  Zhao Baiqin  Liu Su
Affiliation:1. State Key Laboratory for Super Lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China;Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
2. State Key Laboratory for Super Lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China
3. Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
Abstract:
Keywords:non-volatile memory  ultra-low-power  area-efficient  CMOS  RFID
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