| 高温退火非掺杂磷化铟制备半绝缘材料 |
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| 引用本文： | 赵有文,董宏伟,焦景华,赵建群,林兰英,孙聂枫,孙同年.高温退火非掺杂磷化铟制备半绝缘材料[J].半导体学报,2002,23(3). |
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| 作者姓名： | 赵有文 董宏伟 焦景华 赵建群 林兰英 孙聂枫 孙同年 |
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| 作者单位： | 1. 中国科学院半导体研究所,材料中心及材料科学开放实验室,北京,100083
2. 河北半导体研究所,石家庄,050051 |
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| 摘 要： | 对液封直拉(LEC)非掺磷化铟(InP)进行930℃ 80h的退火可重复制备直径为50和75mm的半绝缘 (SI)衬底.退火是在密封的石英管内纯磷(PP)或磷化铁(IP)两种气氛下进行的.测试结果表明IP-SI InP衬底具有很好的电学性质和均匀性,而PP-SI的均匀性和电学参数都很差.在IP-SI样品的PL谱中出现与深缺陷有关的荧光峰.光激电流谱的测量结果表明:在IP气氛下退火获得的半绝缘磷化铟中的缺陷明显比PP-SI磷化铟的要少.并对退火后磷化铟中形成缺陷的机理进行了探讨.
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| 关 键 词： | 磷化铟 半绝缘 退火 |
Preparation of Semi-Insulating Material by Annealing Undoped InP |
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| Zhao Youwen,Dong Hongwei,Jiao Jinghua,Zhao Jianqun,Lin Lanying,Sun Niefeng,Sun Tongnian.Preparation of Semi-Insulating Material by Annealing Undoped InP[J].Chinese Journal of Semiconductors,2002,23(3). |
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| Authors: | Zhao Youwen Dong Hongwei Jiao Jinghua Zhao Jianqun Lin Lanying Sun Niefeng Sun Tongnian |
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| Abstract: | Semi-insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930℃ for 80h.The annealing ambient can be pure phosphorus (PP) or iron phosphide (IP).The IP-SI InP wafers have good electrical parameters and uniformity of whole wafer.However,PP-SI InP wafers exhibit poor uniformity and electrical parameters.Photoluminescence which is subtle to deep defect appears in IP-annealed semi-insulating InP.Traps in annealed SI InP are detected by the spectroscopy of photo-induced current transient.The results indicate that there are fewer traps in IP-annealed undoped SI InP than those in as-grown Fe-doped and PP-undoped SI InP.The formation mechanism of deep defects in annealed undoped InP is discussed. |
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| Keywords: | indium phosphide semi-insulating annealing |
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