| 固态微波器件与电路的新进展 |
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| 引用本文： | 赵正平.固态微波器件与电路的新进展[J].中国电子科学研究院学报,2007,2(4):329-335. |
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| 作者姓名： | 赵正平 |
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| 作者单位： | 中国电子科技集团公司,北京,100846 |
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| 摘 要： | 描述了固态微波器件与电路五个发展阶段,并重点就当前发展的InP HEMT、窄禁带材料HEMT和HBT、宽禁带材料MESFET和HEMT、RF CMOS、InP HBT、SiGe HBT、RF MEMS等七个领域的发展特点、2006年最新进展,以及未来发展趋势进行了介绍.并就我国发展固态微波器件与电路提出发展建议.
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| 关 键 词： | 固态微波 异质结场效应晶体管 异质结双极晶体管 |
| 文章编号： | 1673-5692（2007）04-329-07 |
| 修稿时间： | 2007-05-20 |
The New Developments of Solid State Microwave Devices and Circuits |
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| ZHAO Zheng-ping.The New Developments of Solid State Microwave Devices and Circuits[J].Journal of China Academy of Electronics and Information Technology,2007,2(4):329-335. |
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| Authors: | ZHAO Zheng-ping |
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| Affiliation: | China Electronics Technology Group Corporation, Beijing 100846, China |
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| Abstract: | This paper describes the five developmented stages of solid state devices and circuits, with emphasis put on the performance, the new progress in 2006 and future trends of InP HEMT, narrow bandgap materials HEMT and HBT. Wide bandgap materials MESFET and HEMT, RF CMOS, InP HBT, SiCe HBT, RF MEMS are reviewed. In addition, the developmet of solid state microwave devices and circuits in China is suggested. |
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| Keywords: | solid state microwave heterojunction field effect transistor hetero junction bipola transistor |
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