| 微波大功率SiC MESFET及MMIC |
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| 引用本文： | 柏松,陈刚,吴鹏,李哲洋,郑惟彬,钱峰.微波大功率SiC MESFET及MMIC[J].中国电子科学研究院学报,2009,4(2). |
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| 作者姓名： | 柏松 陈刚 吴鹏 李哲洋 郑惟彬 钱峰 |
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| 作者单位： | 南京电子器件研究所单片集成电路与模块国家级重点实验室,南京,210016 |
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| 摘 要： | 利用本实验室生长的4H-SiC外延材料开展了SiC MESFET和MMIC的工艺技术研究.研制的SiC MESFET采用栅场板结构,显示出优异的脉冲功率特性,20 mm栅宽器件在2 GHz脉冲输出功率达100 W.将四个20 mm栅宽的SiC MESFET芯片通过内匹配技术进行功率合成,合成器件的脉冲功率超过320 W,增益8.6 dB.在实现SiC衬底减薄和通孔技术的基础上,设计并研制了国内第一片SiC微波功率MMIC,在2～4 GHz频带内小信号增益大于10 dB,脉冲输出功率最大超过10 W.
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| 关 键 词： | 微波功率 宽带 |
SiC MESFETs and MMICs for Microwave Power Applications |
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| BAI Song,CHEN Gang,WU Peng,LI Zhe-yang,ZHENG Wei-bin,QIAN Feng.SiC MESFETs and MMICs for Microwave Power Applications[J].Journal of China Academy of Electronics and Information Technology,2009,4(2). |
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| Authors: | BAI Song CHEN Gang WU Peng LI Zhe-yang ZHENG Wei-bin QIAN Feng |
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| Affiliation: | National Key Laboratory of Monolithic Integrated Circuits and Modules;Nanjing Electronic Devices Institute;Nanjing 210016;China |
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| Abstract: | Research carried out in the lab in Nanjing Electronic Devices Institute regarding SiC MESFET and MMIC technology is described in this paper,using 4H-SiC epitaxial materials developed by the lab. According to the research,SiC MESFETs with a gate width of 20 mm can produce a pulse power of over 100 W at 2 GHz. Four SiC MESFET chips with a 20 mm gate width are put together via power combination. The resultant device demonstrates a pulse power of over 320 W,a gain of 8.6 dB compared to an individual chip. With ... |
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| Keywords: | SiC MESFET MMIC |
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