首页 | 本学科首页   官方微博 | 高级检索  
     

一种新颖的带背景抑制红外读出单元电路
引用本文:李牧,杨淼,宋文星,周扬帆,孙伟峰.一种新颖的带背景抑制红外读出单元电路[J].电子器件,2011,34(6):653-658.
作者姓名:李牧  杨淼  宋文星  周扬帆  孙伟峰
作者单位:东南大学国家专用集成电路系统工程技术研究中心
基金项目:中国科学院红外成像材料与器件重点研究室开放课题(IIMDKFJJ-09-01);航空科学基金(20090169003)
摘    要:设计了一种带新型背景抑制技术的红外读出电路,该电路通过控制开关管的导通与关断,使背景抑制电流源在积分过程中间断性地产生背景抑制电流.同时,背景抑制电流产生管工作在强反型区,减小了由工艺失配和噪声所引起的单元电路间背景抑制电流的变化,降低了电路的背景抑制非均匀性.所提出的读出电路基于CSMC DPTM(双晶三铝)0.5 ...

关 键 词:红外焦平面阵列  读出电路  背景电流  背景抑制

A Novel Infrared Readout Circuit With Background Suppression
LI Mu,YANG Miao,SONG Wenxing,ZHOU Yangfan,SUN Weifeng.A Novel Infrared Readout Circuit With Background Suppression[J].Journal of Electron Devices,2011,34(6):653-658.
Authors:LI Mu  YANG Miao  SONG Wenxing  ZHOU Yangfan  SUN Weifeng
Affiliation:(National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China)
Abstract:An infrared readout circuit with novel background suppression technique was proposed.By closing and opening the switch transistor,the background suppression current source can generate discontinious background suppression current.And when the switch transistor is closed,the other two transistors operate in strong inversion region,which reduces the background suppression current spatial variations over the cell array caused by process mismatches(particularly threshold voltage variations)and noise.Therefore,the background suppression non-uniformity of the readout circuit becomes lower.The proposed readout circuit has been fabricated in a standard 0.5 μm Double Poly Triple Metal(DPTM)n-well CMOS process.The measure results show that the background suppression non-uniformity of the chip is 1.23%,and the circuit linearity is 98.88%.With 90.36 nA background current,the maximum signal current is 5.52 nA and the peak signal-to-noise ratio of the circuit is 63.24 dB.
Keywords:IRFPA  ROIC  background current  background suppression
本文献已被 CNKI 等数据库收录!
点击此处可从《电子器件》浏览原始摘要信息
点击此处可从《电子器件》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号