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CMOS Schmitt触发器的设计与模拟
引用本文:程坤, 秦明, 张中平, 黄庆安,.CMOS Schmitt触发器的设计与模拟[J].电子器件,2005,28(3):505-508.
作者姓名:程坤  秦明  张中平  黄庆安  
作者单位:东南大学MEMS教育部重点实验室,南京,210096;东南大学MEMS教育部重点实验室,南京,210096;东南大学MEMS教育部重点实验室,南京,210096;东南大学MEMS教育部重点实验室,南京,210096
基金项目:国家自然科学基金;江苏省自然科学基金
摘    要:分析了普遍的六管CMOS Schmitt触发器管子宽长比设计公式,从触发器的工作原理出发指出了其不尽合理之处。根据I.M.Fianosky提出的触发器实际的阈值电平理论,考虑M2和M5两管对阈值电平的影响,提出了新的CMOSSchmitt触发器宽长比设计公式。举例说明了在一定的设计考虑和工艺条件下如何利用这一公式进行设计。

关 键 词:Schmitt触发器  阈值电平  触发特性
文章编号:1005-9490(2005)03-0505-04
收稿时间:2005-03-11
修稿时间:2005-03-11

Design and Simulation of CMOS Schmitt Trigger
CHENG Kun,QIN Ming,ZHANG Zhong-ping,HUANG Qing-an.Design and Simulation of CMOS Schmitt Trigger[J].Journal of Electron Devices,2005,28(3):505-508.
Authors:CHENG Kun  QIN Ming  ZHANG Zhong-ping  HUANG Qing-an
Affiliation:Key Laboratory of MEMS of Ministry of Education; Nanjing 210096; China
Abstract:An improved design formula of CMOS Schmitt trigger is introduced. The transistor scale design formula of general CMOS Schmitt trigger is analyzed and the drawback is taken into account. From the discussion, something not proper to the formula is pointed out. Based on the theory of the true threshold voltage of the trigger presented by I. M. Fianosky, the influence on threshold voltage caused by M2 and M5 is considered. A practical example is given to explain how to design a CMOS Schmitt trigger with the new design formula under certain design and process conditions.
Keywords:Schmitt trigger  threshold voltage  trigger characteristic
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