| GaN基LED光电器件的磊层研究与设计 |
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| 引用本文： | 姚惠林,宋丽君,路纲,陈朝辉,王波.GaN基LED光电器件的磊层研究与设计[J].电子器件,2015,38(6). |
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| 作者姓名： | 姚惠林 宋丽君 路纲 陈朝辉 王波 |
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| 作者单位： | 洛阳理工学院 |
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| 基金项目： | 河南省教育厅高等学校重点科研项目 |
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| 摘 要： | 介绍了一种缓解GaN基LED效率下降的器件设计方法，重点研究了采用新方法光电器件中载流子的分布。根据与传统GaN器件的对比，可以发现LED效率提高的原因是空穴的浓度分布的更加均匀。
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| 关 键 词： | 氮化镓基，效率下降，载流子分布 |
Study and design of high efficiency GaN based LED optoelectronic device |
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| Abstract: | We investigate the advantages of a newly designed barriers for GaN based light-emitting diodes. It is found that the newly designed structure shows improved light output power, lower current leakage, and less efficiency droop over its conventional counterparts. These improvements on the electrical and the optical characteristics are mainly attributed to the improve carriers distribution in the multiple quantum wells. |
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| Keywords: | GaN based efficiency droop carrier distribution |
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