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基于四取代铜酞菁的有机近红外电致磷光器件
引用本文:范昭奇.基于四取代铜酞菁的有机近红外电致磷光器件[J].光电子.激光,2010(4):524-528.
作者姓名:范昭奇
作者单位:大连理工大学物理与光电工程学院;吉林大学电子科学与工程学院;运城学院化学系;
基金项目:国家自然科学基金资助项目(60807009); 高等学校博士学科点专项科研基金资助项目(200801411038)
摘    要:制备了结构为ITO/NPB/TPBI:(4-tert)CuPc/BCP/Alq3/Al的近红外(NIR)有机电致发光器件(OLED),器件在室温下的发射峰位于1110nm附近,来源于(4-tert)CuPc分子的磷光发射,器件的最佳掺杂浓度为14wt%。制备了结构为ITO/NPB/TPBI:(4-tert)CuPc/DCJTB/BCP/Alq3/Al的器件,结果表明,DCJTB层的加入没有改变器件的NIR电致发光(EL)峰位置,而器件的NIR发光强度与没有DCJTB层的器件相比,提高了50%左右,这是由于DCJTB向(4-tert)CuPc进行了有效的能量传输。

关 键 词:酞菁  有机电致发光器件(OLED)  近红外(NIR)

Near-infrared organic electrophosphorescenct diodes based on Tetra-substituted copper phthalocyanine
FAN Zhao-qi.Near-infrared organic electrophosphorescenct diodes based on Tetra-substituted copper phthalocyanine[J].Journal of Optoelectronics·laser,2010(4):524-528.
Authors:FAN Zhao-qi
Affiliation:FAN Zhao-qi1,CHENG Chuan-hui1,SHENG Ren-sheng1,LI Wan-cheng2,WANG Jin2,BAI Qing-long1,XIA Dao-cheng3,DU Guo-tong1,2(1.School of Physics , Optoelectronic Technology,Dalian University of Technology,Dalian 116024,China,2.State Key Laboratory of Integrated Optoelectronics,Jilin University,Changchun 130012,3.College of Chemistry,Yuncheng Univercity,Yuncheng 044000,China)
Abstract:The near-infrared (NIR) organic light-emitting diodes (OLEDs) with the structure of ITO/NPB/TPBI:(4-tert)CuPc/BCP/Alq3/Al are fabricated by vacuum thermal evaporation.The emission peak is about 1 110 nm at room temperature.The emissions are from the first excited triplet state to the ground state of (4-tert)CuPc.The optimal doping concentration of (4-tert)CuPc in TPBI is 14 wt%.The devices with the structure of ITO/NPB/TPBI:(4-tert)CuPc/DCJTB/BCP/Alq3/Al are also fabricated.The results indicate that the ins...
Keywords:phthalocyanine  organic light-emitting diodes(OLED)  near-infrared(NIR)  
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