电子束沉积生长高迁移率IMO透明导电薄膜的研究

研究了利用电子束反应蒸发技术梯度速率生长高迁移率In2O3:Mo(IMO)薄膜的微观结构、光学和电学性能。高纯度In2O3:MoO3陶瓷靶和O2作为源材料。首先,利用低沉积速率(约0.01nm/s)生长一层厚度约为30nm的IMO薄膜,作为缓冲层,其次,提高生长速率至0.04nm/s,高速率生长IMO薄膜,薄膜厚度约50nm。典型薄膜电阻率ρ约为2.5×10-4Ωcm,方块电阻Rs约为22.5Ω,载流子浓度n～5.8×1020cm-3,电子迁移率μ约为47.1cm2V-1s-1,可见光和近红外区域平均透过率约为80%。获得的IMO薄膜光电性能和直接利用低速率生长的薄膜特性相当或更好,并且极大地降低了薄膜生长时间。

High-mobility transparent conducting IMO thin films grown by reactive electron beam vapor deposition

Molybdenum-doped indium oxide(IMO) thin films are deposited at 350 ℃ with a growth rate varying in the range of 0.01-0.04 nm by the reactive electron beam vapor technique,and the microstructure,optical and electrical properties of the IMO films are investigated in detail.High purity In2O3:MoO3 ceramic targets and oxygen gas are used as source materials.Firstly,a 30 nm-thickness IMO buffer layer is fabricated on glass substrate by electron beam vapor deposition at the low growth rate of 0.01 nm/s.Secondly,a 50 nm-thickness IMO film is fabricated on the buffer layer via the same deposition technique at relatively higher growth rate of ～0.04 nm/s.The IMO film performances are as follows:resistivity,ρ,is ～2.5×10-4 Ω cm,sheet resistance,Rs,is ～22.5 Ω,concentration,n,is ～5.8×1020 cm-3,electron mobility,μ is ～47.1 cm2V-1s-1,the average transmittance in the visible and near infrared region,Ta,is ～80%.The optical and electrical properties of the IMO films obtained with buffer layer are equivalent to/or superior to those of the films at low growth rate.In addition,the buffer-layer reduces effectively the process time.