| 热致漂白效应对非晶Ge34Ga2S64薄膜结构和光学特性的影响 |
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| 引用本文： | 陈昱,沈祥,王国祥,付晶,陈芬,李军,张巍,林常规,戴世勋,徐铁峰,聂秋华.热致漂白效应对非晶Ge34Ga2S64薄膜结构和光学特性的影响[J].光电子．激光,2012(4):718-723. |
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| 作者姓名： | 陈昱 沈祥 王国祥 付晶 陈芬 李军 张巍 林常规 戴世勋 徐铁峰 聂秋华 |
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| 作者单位： | 宁波大学红外材料及器件实验室;宁波大学红外材料及器件实验室;宁波大学红外材料及器件实验室;宁波大学红外材料及器件实验室;宁波大学红外材料及器件实验室;宁波大学红外材料及器件实验室;宁波大学红外材料及器件实验室;宁波大学红外材料及器件实验室;宁波大学红外材料及器件实验室;宁波大学红外材料及器件实验室;宁波大学红外材料及器件实验室 |
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| 基金项目： | 国家自然科学基金(60978058,61008041);浙江省自然科学基金(Y1090996);宁波市新型光功能材料与器件创新团队基金(2009B21007);宁波自然基金(2011A610092);瞬态光学与光子技术国家重点实验室开放课题(SKLST201010);宁波大学胡岚博士基金及王宽诚幸福基金;宁波大学优秀学位论文培育基金;浙江省大学生科技创新活动计划(2001R405055)资助项目 |
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| 摘 要： | 采用热蒸发法技术沉积Ge34Ga2S64非晶薄膜,并对薄膜样品在375℃热处理2h。通过分光光度计、表面轮廓仪和显微拉曼光谱仪测试热处理前后薄膜样品的透过曲线、薄膜厚度和拉曼结构。利用薄膜干涉曲线的波峰和波谷计算了薄膜的厚度和折射率,并根据Swanepoel方法以及Tauc公式分别计算了薄膜折射率色散曲线和光学带隙等参数。结果表明,Ge34Ga2S64非晶薄膜经热处理后发生热致漂白效应,大分子团簇以及Ge-Ge、S-S同极错键含量明显减少,网络结构无序性降低,从而引起薄膜的光学吸收边蓝移、折射率降低、表面粗糙度(Ra)降低0.515nm和光学带隙增大0.118eV。
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| 关 键 词： | Ge-Ga-S薄膜 热蒸发 光学参数 拉曼结构 热致漂白 |
Effect of thermal-bleaching on the structure and optical properties of thermally evaporated Ge34Ga2S64 film |
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| CHEN Yu,SHEN Xiang,WANG Guo-xiang,FU jing,CHEN Fen,LI Jun,ZHANG Wei,LIN Chang-gui,DAI Shi-xun,XU Tie-feng and NIE Qiu-hua.Effect of thermal-bleaching on the structure and optical properties of thermally evaporated Ge34Ga2S64 film[J].Journal of Optoelectronics·laser,2012(4):718-723. |
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| Authors: | CHEN Yu SHEN Xiang WANG Guo-xiang FU jing CHEN Fen LI Jun ZHANG Wei LIN Chang-gui DAI Shi-xun XU Tie-feng and NIE Qiu-hua |
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| Affiliation: | Laboratory of Infrared Material and Devices,Ningbo University,Ningbo 315211,China;Laboratory of Infrared Material and Devices,Ningbo University,Ningbo 315211,China;Laboratory of Infrared Material and Devices,Ningbo University,Ningbo 315211,China;Laboratory of Infrared Material and Devices,Ningbo University,Ningbo 315211,China;Laboratory of Infrared Material and Devices,Ningbo University,Ningbo 315211,China;Laboratory of Infrared Material and Devices,Ningbo University,Ningbo 315211,China;Laboratory of Infrared Material and Devices,Ningbo University,Ningbo 315211,China;Laboratory of Infrared Material and Devices,Ningbo University,Ningbo 315211,China;Laboratory of Infrared Material and Devices,Ningbo University,Ningbo 315211,China;Laboratory of Infrared Material and Devices,Ningbo University,Ningbo 315211,China;Laboratory of Infrared Material and Devices,Ningbo University,Ningbo 315211,China |
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| Abstract: | Amorphous films of Ge34Ga2S64were deposited on quartz substrates by using thermal evaporation method.The optical parameters of as-deposited and annealed films are calculated using the Swanepoel method and Tauc law from the optical transmission spectra.After the heat treatment of as-deposited films at 375 ℃ for 2 h,the thermal-bleaching effects are observed,which are related to the reduction of clusters and fragments,as well as the density of homopolar bonds confirmed by the Raman spectra.As a result,the absorption spectra are blue shifted,the optical band gap of the studied films is increased by 0.118 eV,and the surface roughness is decreased by 0.515 nm. |
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| Keywords: | Ge-Ga-S film thermal evaporation optical parameters Raman structure thermal-bleaching |
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