| 基于紫外光刻的双轴张应变Ge/SiGe多量子阱电吸收调制器北大核心CSCD |
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| 引用本文： | 黄强,高建峰,黄楚坤,江佩璘,孙军强,余长亮.基于紫外光刻的双轴张应变Ge/SiGe多量子阱电吸收调制器北大核心CSCD[J].光电子．激光,2022(11):1121-1126. |
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| 作者姓名： | 黄强 高建峰 黄楚坤 江佩璘 孙军强 余长亮 |
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| 作者单位： | 华中科技大学 武汉光电国家研究中心，湖北 武汉 430074 ;邵阳学院 电气工程学院 多电源地区电网运行与控制湖南省重点实验室，湖南 邵阳 422000,华中科技大学 武汉光电国家研究中心，湖北 武汉 430074,华中科技大学 武汉光电国家研究中心，湖北 武汉 430074,华中科技大学 武汉光电国家研究中心，湖北 武汉 430074,华中科技大学 武汉光电国家研究中心，湖北 武汉 430074,武汉飞思灵微电子技术有限公司，湖北 武汉 430074 |
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| 基金项目： | 湖北省重点研发计划项目(2021BAA002)资助项目 |
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| 摘 要： | 采用紫外光刻工艺(ultraviolet lithography technique,UVL),在互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)兼容的硅基平台上制作了基于悬空微桥结构在Ge/SiGe多量子阱材料中引入双轴张应变的低偏振相关电吸收调制器。利用拉曼光谱测试了器件引入双轴张应变的大小,并对器件在横电(transverse electric,TE)偏振和横磁(transverse magnetic,TM)偏振下的光电流响应、调制消光比和高频响应等性能进行了测试。器件的低偏振相关消光比在0 V/4 V工作电压下可达5.8 dB,3 dB调制带宽在4 V反向偏置电压时为8.3 GHz。与电子束光刻工艺(electron beam lithography technique,EBL)相比,采用UVL制作的器件在调制消光比、高频响应带宽等性能上略差一点,但具有曝光时间短、成本低和可大批量生产等优势,应用前景广阔。
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| 关 键 词： | 紫外光刻工艺(UVL) Ge/SiGe多量子阱 双轴张应变 低偏振相关 电吸收调制器 |
| 收稿时间： | 2022/5/30 0:00:00 |
| 修稿时间： | 2022/8/29 0:00:00 |
Biaxially tensile-strained Ge/SiGe multiple quantum wells electro-absorption m odulator based on ultraviolet lithography |
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| HUANG Qiang,GAO Jianfeng,HUANG Chukun,JIANG Peilin,SUN Junqiang and YU Changliang.Biaxially tensile-strained Ge/SiGe multiple quantum wells electro-absorption m odulator based on ultraviolet lithography[J].Journal of Optoelectronics·laser,2022(11):1121-1126. |
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| Authors: | HUANG Qiang GAO Jianfeng HUANG Chukun JIANG Peilin SUN Junqiang and YU Changliang |
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| Affiliation: | Wuhan National Laboratory for Optoelectronics,Huazhong University of Scienc e and Technology,Wuhan, Hubei 430074, China;Hunan Provincial Key Laboratory of Grids Operation and Control on Multi-Power Sources Area,School of Electrical Engineering,Shaoyang University,Shaoyang,H unan 422000, China,Wuhan National Laboratory for Optoelectronics,Huazhong University of Scienc e and Technology,Wuhan, Hubei 430074, China,Wuhan National Laboratory for Optoelectronics,Huazhong University of Scienc e and Technology,Wuhan, Hubei 430074, China,Wuhan National Laboratory for Optoelectronics,Huazhong University of Scienc e and Technology,Wuhan, Hubei 430074, China,Wuhan National Laboratory for Optoelectronics,Huazhong University of Scienc e and Technology,Wuhan, Hubei 430074, China and Wuhan Fisilink Microelectronics Technology Co.,Ltd.,Wuhan,Hubei 430074, China |
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| Abstract: | A low polarization-dependent Ge/SiGe multiple quantum wells electro- absorption modulator by introducing biaxial tensile strain through suspended microbridge st ructure is fabricated on complementary-metal-oxide-semiconductor (CMOS) compatible silicon platform using ultraviolet lithography technique (UVL).The biaxial tensile strain of the fabricated device is me asured through Raman spectroscopy,and the photocurrent response,modulation extinction ratio and hig h frequency response of the device are tested under both of transverse electric (TE) and transverse m agnetic (TM) polarization.The device presents a low polarization-dependent extinction ratio of 5.8 dB under 0 V/4 V operation,together with a 3 dB modulation bandwidth of 8.3 GHz at 4 V revers e bias voltages. Compared with electron beam lithography technique (EBL),although the device fabricate d through UVL performs a little worse in modulation extincti on ratio and high frequency response bandwidth,it has the advantages of short exposure time,low cost and enabling mass production,which has broad application prospects. |
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| Keywords: | ultraviolet lithography technique (UVL) Ge/SiGe multiple quantum wells bi axial tensile strain low polarization dependence electro-absorption modulator |
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