| RF磁控溅射功率对ZnO:Al薄膜结构和性能的影响 |
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| 引用本文： | 杨伟锋,刘著光,吕英,黄火林,吴正云.RF磁控溅射功率对ZnO:Al薄膜结构和性能的影响[J].光电子．激光,2008,19(12). |
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| 作者姓名： | 杨伟锋 刘著光 吕英 黄火林 吴正云 |
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| 作者单位： | 1. 厦门大学物理系,福建,厦门,361005
2. 厦门大学物理系,福建,厦门,361005;厦门大学萨本栋微机电中心,福建,厦门,361005 |
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| 摘 要： | 采用RF磁控溅射技术以ZnO:Al2O3(2 wt%Al2O3)为靶材在石英玻璃衬底上制备多晶ZnO:Al(AZO)薄膜,通过XRD、AFM、AES以及Hall效应、透射光谱、折射率等手段研究了RF溅射功率(50～300 W)对薄膜的组织结构和电学,光学性能的影响.分析表明:所制备的AZO薄膜具有c轴择优取向,并且通过对不同功率下薄膜载流子浓度与迁移率的研究发现对于室温下沉积的AZO薄膜,晶粒间界中的O原子吸附是影响薄膜电学性能的主要因素.同时发现当功率为250 W时薄膜的电阻率降至最低(3.995×10-3 Ω·cm),可见光区平均透射率为91%.
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| 关 键 词： | RF磁控溅射 透明导电薄膜 AZO薄膜 |
Effect of RF power on the structure and properties of ZnO:Al films deposited by magnetron sputtering |
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| YANG Wei-feng,LIU Zhu-guang,LV Ying,HUANG Huo-lin,WU Zheng-yun.Effect of RF power on the structure and properties of ZnO:Al films deposited by magnetron sputtering[J].Journal of Optoelectronics·laser,2008,19(12). |
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| Authors: | YANG Wei-feng LIU Zhu-guang LV Ying HUANG Huo-lin WU Zheng-yun |
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| Affiliation: | YANG Wei-feng1,LIU Zhu-guang1,LV Ying1,HUANG Huo-lin1,WU Zheng-yun1,2(1.Department of Physics,Xiamen University,Xiamen 361005,China,2.MEMS Center,China) |
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| Abstract: | Aluminum doped zinc oxide films are deposited by magnetron sputtering using a zinc oxide target doped with Al2O3(2 wt%.) with different RF powers on quartz substrate.The structural and compositional characteristics of the films are investigated by XRD,AFM,SEM,AES and XPS.respctively,while the electrical and optical properties of the thin films are studied by the Hall measurement and spectrophotometry,respectively.It has been found that all films deposited are c-axis preferred orientation perpendicular to th... |
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| Keywords: | RF magnetron sputtering transparent conductive film AZO film |
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