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| 单片集成MSM／HEMT长波长光接收机 | |
| 引用本文： | 敖金平,曾庆明.单片集成MSM／HEMT长波长光接收机[J].光电子．激光,2000,11(3):241-243. |
| 作者姓名： | 敖金平 曾庆明 |
| 作者单位： | 1. 河北半导体研究所,石家庄,050051;吉林大学电子工程系,长春,130023 2. 河北半导体研究所,石家庄,050051 3. 吉林大学电子工程系,长春,130023 |
| 基金项目： | 国家“八六三”计划资助项目![863 -3 0 7-0 6-0 2 ( 0 3 ) ] |
| 摘 要： | 本文介绍了利用ＩｎＧａＡｓ金属－半导体－金属（ＭＳＭ）长波长光探测器与ＩｎＡ１Ａｓ高电子迁移率晶体管（ＨＥＭＴ）单片集成来实现长波长光接收机的材料和电路设计、工艺途径等研究工作，基本解决了两种器件集成的工艺兼容性的问题，实现了１．３Ｇｂ／ｓ传输速率的单片集成长波长光接收机样品。 |
| 关 键 词： | MSM光探测器 光接收机 长波长 光集成电路 |
Monolithically Integrated MSM/HEMT Long-wavelength Phot oreceiver |
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| AO Jin-ping,ZENG Qing-ming,ZHAO Yong-lin,LI Xian-jie,CAI Ke-li,LIU Shi-yong,LIANG Chun-guang.Monolithically Integrated MSM/HEMT Long-wavelength Phot oreceiver[J].Journal of Optoelectronics·laser,2000,11(3):241-243. | |
| Authors: | AO Jin-ping ZENG Qing-ming ZHAO Yong-lin LI Xian-jie CAI Ke-li LIU Shi-yong LIANG Chun-guang |
| Abstract: | This paper presents the work inclu dintg the material and circuit design,the process ot realizing long-wavelength ph otoreceiver by monolithically integrated InGaAs metal-semiconductor-metal (MSM ) photodetector and InAlAs-InGaAs High Electron Mobility Transistor (HEMT).The process compatibility for integrating the two kinds of devices has been done a lmost well and the sample with transmitting rate of 1.3 Gb/s has been obtained. |
| Keywords: | OEIC MSM photodetector HEMT optoel ectronic integration photoreceiver |
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