| Al薄膜对(002)ZnO/Al/Si结构基片中ZnO薄膜特性影响的实验研究 |
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| 引用本文： | 张倩,陈希明,杨保和,阴聚乾,吴晓国.Al薄膜对(002)ZnO/Al/Si结构基片中ZnO薄膜特性影响的实验研究[J].光电子．激光,2013(5):935-939. |
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| 作者姓名： | 张倩 陈希明 杨保和 阴聚乾 吴晓国 |
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| 作者单位： | 天津理工大学 电子信息工程学院 天津市薄膜电子与通信器件重点实验室,天津 300384;天津理工大学 电子信息工程学院 天津市薄膜电子与通信器件重点实验室,天津 300384;天津理工大学 电子信息工程学院 天津市薄膜电子与通信器件重点实验室,天津 300384;天津理工大学 电子信息工程学院 天津市薄膜电子与通信器件重点实验室,天津 300384;天津理工大学 电子信息工程学院 天津市薄膜电子与通信器件重点实验室,天津 300384 |
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| 基金项目： | 国家自然科学基金(50972105,60806030)和天津自然科学基金(09JCZDJC16500,08JCYBJC14600)资助项目 (天津理工大学 电子信息工程学院 天津市薄膜电子与通信器件重点实验室,天津 300384) |
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| 摘 要： | 采用射频磁控溅射法沉积制备了(002)ZnO/A l/Si复合结构。研究了Al薄膜对(002) ZnO/Al/Si复合结构的声表面波器件(SAWD)基片性能影响以及当ZnO 薄膜厚度一定时的Al膜最佳厚度。采用X射线衍射(XRD)对Al和ZnO薄膜进行了结构表征 ,采用 扫描电镜(SEM)对ZnO薄膜进行表面形貌表征,并从薄膜生长机理角度进行了分析。结果 表明,加Al薄膜有利于ZnO薄膜按(002)择优取向生长,并且ZnO 薄膜的结晶性能提高；与(002)ZnO/Si结构基片相比,当Al薄膜 厚为100nm时,(002)ZnO/Al/Si结构中ZnO薄 膜的机电耦合系数提高 了65%。
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| 关 键 词： | 声表面波器件(SAWD) (002)择优取向 Al薄膜 |
| 收稿时间： | 2012/10/8 0:00:00 |
Effects of Al thin film on the properties of ZnO thin film in (002)ZnO/Al/(100)S i composite structure |
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| Affiliation: | Tianjin Key Lab.of Films Electronics and Communication Devices,School of Electr onics Information Engineering,Tianjin University of Technology,Tianjin 300384,Ch ina;Tianjin Key Lab.of Films Electronics and Communication Devices,School of Electr onics Information Engineering,Tianjin University of Technology,Tianjin 300384,Ch ina;Tianjin Key Lab.of Films Electronics and Communication Devices,School of Electr onics Information Engineering,Tianjin University of Technology,Tianjin 300384,Ch ina;Tianjin Key Lab.of Films Electronics and Communication Devices,School of Electr onics Information Engineering,Tianjin University of Technology,Tianjin 300384,Ch ina;Tianjin Key Lab.of Films Electronics and Communication Devices,School of Electr onics Information Engineering,Tianjin University of Technology,Tianjin 300384,Ch ina |
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| Abstract: | The effects of Al thin film on the properties of ZnO thin film in (002)ZnO/Al/(100)Si composite structure and the optimum thickness of Al thin film when the thickness of ZnO thin film is fixed are discussed by RF magnetron sputtering.The structure of ZnO films is investigated by X-ray diffraction (XRD) spectra.The surface morphology and piezoelectric properties of ZnO films are characterized by scanning electron microscope (SEM).Meanwhile,the ZnO films are analyzed from a perspective of film growth mechanization.The results show that (002)preferred orientation of ZnO thin films in (002)ZnO/Al/(100)Si composite structure and the crystallization property are enhanced obviously compared with the (002)ZnO/Si structure.When the thickness of aluminum is 100nm,the electromechanical coupling coefficient of ZnO thin films in (002)ZnO/Al/(100)Si composite structur e is 65% larger than that in the (002)ZnO/Si structure.The conclusion establish es base for studying the ZnO/Al/diamond/Si composite structure and will be of great importance in developing new high-frequency surface acoustic wave (SAW ) devices. |
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| Keywords: | : surface acoustic wave device (SAWD) (002) preferred orientation Al thin film |
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