MOCVD原位监测垂直腔面发射激光器材料生长

利用MOCVD的原位监测控制生长垂直腔面发射激光器材料。通过GaAs／AlGaAs DBR结构生长表明系统的原位监测结果与实际结果间存在2％的偏差。修正原位监测的参数,可实现利用原位监测进行实时控制生长,从而有效地减少系统漂移对材料生长的影响,提高系统的控制精度。用于垂直腔面发射激光器(VCSEL)的外延生长中,可以有效减少生长次数并得到高质量的外延材料,制作的VCSEL器件在室温下得到10．1mw的脉冲功率和7．1mw的直流功率。

Growth High Quality Material of VCSEL by MOCVD in-situ Optical Monitoring

A method of controlling growth the VCSEL material by MOCVD with the in-situ optical monitoring were presented.Based on the growth of GaAs/AlGaAs DBR structure,it was found that the result between the in-situ monitoring and factual reflection has 2% mismatch.To modify the parameter of the in-situ monitoring,the real-time in-situ control could be achieved,and the effect what were due to the drift of the system could be reduced.The high quality material has been grown with few runs when the method has been used in a run for growing a VCSEL structure.The VCSEL with good performance can be processed,10.1 mW PW and 7.1 mW CW output power achieved at room temperature.