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发光二极管中负电容现象的实验研究
引用本文:王军,冯列峰,朱传云,丛红侠,陈永,王存达.发光二极管中负电容现象的实验研究[J].光电子.激光,2006,17(1):1-4.
作者姓名:王军  冯列峰  朱传云  丛红侠  陈永  王存达
作者单位:1. 天津大学应用物理学系,天津,300072
2. 佛山科学技术学院光电子与物理学系,广东,佛山,528000
摘    要:对各种发光二极管(LEDs)的负电容(NC)进行了研究。实验结果表明,所有的LEDs都展示了NC现象。电压调制发光(VMEL)实验确认,在发光有源区中注入载流子引起的强发光复合是产生NC现象的基本原因。测量还表明,不同的LEDs的NC随电压和频率的变化规律是类似的;测试频率越低,正向偏压越高,NC现象越明显。

关 键 词:发光二极管(LEDs)  正向交流(a.c.)特性  负电容(NC)  电压调制发光(VMEL)
文章编号:1005-0086(2006)01-0001-04
收稿时间:2004-12-25
修稿时间:2005-05-24

Experimental Study of Negative Capacitance in LEDs
WANG Jun,FENG Lie-feng,ZHU Chuan-yun,CONG Hong-xi,CHEN Yong,WANG Cun-da.Experimental Study of Negative Capacitance in LEDs[J].Journal of Optoelectronics·laser,2006,17(1):1-4.
Authors:WANG Jun  FENG Lie-feng  ZHU Chuan-yun  CONG Hong-xi  CHEN Yong  WANG Cun-da
Affiliation:1. Dept. of Applied Physies,Tianjin University,Tianjin 300072,China; 2. Dept. of Photoeleetronics Phys. Foshan Univ, Foshan, Foshan 528000, China
Abstract:The experimental study on negative capacitance(NC) of various light-emitting diodes(LEDs) was presented.Experimental results show that all LEDs display the NC phenomenon.The voltage modulated electroluminescence(VMEL) experiment confirms that the reason of negative capacitance could be the strong recombination of the injected carries in the active region of luminescence.The measures also verify that the dependence of NC on voltage and frequency in different LEDs is similar:NC phenomenon is more obvious with higher voltage or lower frequency.
Keywords:light-emitting diodes(LEDs)  forward a  c  behavior  negative capacitance(NC)  voltage modulated electroluminescence(VMEL)  
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