用液相外延法生长3~7μm波段InAs/InAs1-ySby及其光学和电学性质 |
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引用本文: | 高玉竹,龚秀英,Makino T,Yamaguchi T,Rowell N L.用液相外延法生长3~7μm波段InAs/InAs1-ySby及其光学和电学性质[J].光电子.激光,2012(2):286-290. |
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作者姓名: | 高玉竹 龚秀英 Makino T Yamaguchi T Rowell N L |
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作者单位: | 同济大学电子与信息工程学院;同济大学电子与信息工程学院;Hamamatsu Photonics K.K.;Research Institute of Electronics,Shizuoka University;Research Institute of Electronics,Shizuoka University |
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基金项目: | 国家自然科学基金(60777022)资助项目 |
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摘 要: | 用液相外延(LPE)法在InAs衬底上生长了3~7μm波段的InAs1-ySby外延层,研究了外延多层的组份与禁带宽度和晶格常数的关系。用光学显微镜、傅立叶变换红外(FTIR)透射、光荧光(PL)谱测试以及偏振光椭圆仪研究了外延材料的光学特性。电学性质是将计算值与实测有效霍尔(Hall)参数的厚度关系拟合得到的。结果表明,本文生长的材料在中红外光伏型探测器上具有良好的应用前景。
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关 键 词: | InAs/InAsSb 液相外延(LPE) 光学性质 电学性质 |
Preparation and characteristics of InAs/InAs1-ySby in 3-7 μm wavelength range grown by liquid phase epitaxy |
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Affiliation: | College of Electronics and Information Engineering,Tongji University,Shanghai 201804,China;College of Electronics and Information Engineering,Tongji University,Shanghai 201804,China;Hamamatsu Photonics K.K.,5000 Hirakuchi,Hamakita 434-8601,Japan;Research Institute of Electronics,Shizuoka University,3-5-1 Johoku,Hamamatsu 432-8011,Japan;Research Institute of Electronics,Shizuoka University,3-5-1 Johoku,Hamamatsu 432-8011,Japan |
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Abstract: | The InAs1-ySby epilayers with cutoff wavelength within 3-7 μm were grown on n-InAs substrates using liquid phase epitaxy(LPE).The energy band gap and lattice constant of the multi-layer as a function of the composition are investigated.The surface morphology and interface are observed using an optical microscopy.The optical properties of the epilayers are studied using Fourier transform infrared(FTIR) transmission spectra,photoluminescence(PL),and spectro-ellipsometry.The electrical properties are obtained by fitting the measured thickness dependence of the effective Hall parameters.The results show the potential applications of the materials for photovoltaic InAsSb detectors in mid-infrared wavelength range. |
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Keywords: | InAs/InAsSb liquid phase epitaxy(LPE) optical property electrical property |
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