| 势垒层对黑硅光电探测器性能影响的研究 |
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| 引用本文： | 苏元捷,蒋亚东,吴志明,赵国栋. 势垒层对黑硅光电探测器性能影响的研究[J]. 光电子．激光, 2011, 0(10): 1439-1442 |
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| 作者姓名： | 苏元捷 蒋亚东 吴志明 赵国栋 |
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| 作者单位： | 电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室；;电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室；;电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室；;电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室； |
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| 基金项目： | 国家自然科学基金创新研究群体科学基金(61021061);中国博士后科学基金资助项目(20090461332) |
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| 摘 要： | 讨论势垒层Si3N4的引入对黑硅光电探测器光电性能的影响。探测器采用金属一半导体一金属（MSM）器件结构在黑硅层和电极间增加一层势垒层以提高肖特基势垒，从而减低器件的暗电流。实验表明，在相同的光照情况下，有势垒层的探测器暗电流比无势垒层的探测器暗电流至少低1个数量级，且势垒层厚度增加30nm其暗电流降低约1个数量级，而...
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| 关 键 词： | 势垒层 暗电流 光电流 金属-半导体-金属(MSM) 黑硅 |
Influence of barrier layer on photoelectric properties of black silicon photodetectors |
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| SU Yuan-jie,JIANG Ya-dong,WU Zhi-ming and ZHAO Guo-dong. Influence of barrier layer on photoelectric properties of black silicon photodetectors[J]. Journal of Optoelectronics·laser, 2011, 0(10): 1439-1442 |
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| Authors: | SU Yuan-jie JIANG Ya-dong WU Zhi-ming ZHAO Guo-dong |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China |
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| Abstract: | This paper discusses the influence of Si3N4 barrier layer on photoelectric properties of black silicon photodetector.A barrier layer is added between the black silicon layer and the electrode in the metal-semiconductor-metal(MSM) structure in order to increase the Schottky barrier,leading to the decrease of the dark current.According to the experiment,under the same lighting condition,the dark current obtained by adding barrier layer is one order of magnitude lower than the one without barrier l... |
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| Keywords: | barrier Layer dark current photocurrent metal-semiconductor-metal(MSM) black silicon |
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