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激光刻蚀柔性薄膜太阳电池复合背反射层的研究
引用本文:陈亮,马宁华,刘成,叶晓军,张梦炎,陈鸣波.激光刻蚀柔性薄膜太阳电池复合背反射层的研究[J].光电子.激光,2012(3):469-472.
作者姓名:陈亮  马宁华  刘成  叶晓军  张梦炎  陈鸣波
作者单位:上海空间电源研究所;上海空间电源研究所;上海空间电源研究所;上海空间电源研究所;上海空间电源研究所;上海空间电源研究所
摘    要:柔性聚酯膜衬底薄膜电池通过激光刻蚀等工艺形成集成串联,激光刻蚀柔性薄膜太阳电池复合背反射层(Ag/ZnO)是其中的重要工艺。首先对聚酰亚胺(PI)、Ag、ZnO材料的光学特性进行了分析,然后采用1 064nm脉冲激光与532nm脉冲激光分别对柔性薄膜太阳电池复合背反射层进行刻蚀研究。通过改变重复频率、激光功率、扫描速度和焦点位置等参数,分析了激光刻蚀物理机制,获得了好的刻蚀效果。结果表明,1 064nm纳秒脉冲激光更适合刻蚀柔性PI衬底复合背反射层Ag/ZnO,在激光功率860mW、刻蚀速度800mm/s和重复频率50kHz下,获得了底部平整、两侧无尖峰的刻线,刻线宽为32μm,满足柔性薄膜太阳电池集成串联组件的制备工艺要求。

关 键 词:激光刻蚀  柔性薄膜太阳电池  聚酰亚胺(PI)  Ag/ZnO

Laser etching of compound back reflector of flexible thin film solar cell on polyimide
CHEN Liang,MA Ning-hu,LIU Cheng,YE Xiao-jun,ZHANG Meng-yan and CHEN Ming-bo.Laser etching of compound back reflector of flexible thin film solar cell on polyimide[J].Journal of Optoelectronics·laser,2012(3):469-472.
Authors:CHEN Liang  MA Ning-hu  LIU Cheng  YE Xiao-jun  ZHANG Meng-yan and CHEN Ming-bo
Affiliation:Shanghai Institute of Space Power Sources,Shanghai 200245,China;Shanghai Institute of Space Power Sources,Shanghai 200245,China;Shanghai Institute of Space Power Sources,Shanghai 200245,China;Shanghai Institute of Space Power Sources,Shanghai 200245,China;Shanghai Institute of Space Power Sources,Shanghai 200245,China;Shanghai Institute of Space Power Sources,Shanghai 200245,China
Abstract:The monolithic series interconnection of flexible thin film solar cell on polymer(PI) substrate is obtained by laser etching and other technology,and laser etching of compound back reflector(Ag/ZnO) on polyimide is very important.The optical characteristics of polyimide and Ag/ZnO are analyzed.Pulsed lasers with wavelengths of 532 nm and 1 064 nm are used for comparison.The influence of various laser parameters like laser power,pulse overlap,etc.,is discussed and the parameters are optimized.Laser-etching mechanism is analyzed.The experiments show that 1 064 nm pulse laser is more suitable for laser etching of Ag/ZnO on PI.At laser power of 860 mW,etching speed of 800 mm/s and repetition frequency of 50 kHz,a very good etching line with 32 μm width is obtained.
Keywords:laser etching  flexible thin film solar cell  polyimide(PI)  Ag/ZnO
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