首页 | 本学科首页   官方微博 | 高级检索  
     

注入电流对GaN基LED发光特性的影响
引用本文:崔德胜,郭伟玲,崔碧峰,闫薇薇,刘莹.注入电流对GaN基LED发光特性的影响[J].光电子.激光,2011(9):1309-1312.
作者姓名:崔德胜  郭伟玲  崔碧峰  闫薇薇  刘莹
作者单位:北京工业大学光电子技术省部共建教育部重点实验室;;北京工业大学光电子技术省部共建教育部重点实验室;;北京工业大学光电子技术省部共建教育部重点实验室;;北京工业大学光电子技术省部共建教育部重点实验室;;北京工业大学光电子技术省部共建教育部重点实验室;
基金项目:国家“863”计划资助项目(2009AA03A1A3,2008AA03A192);国家科技重大专项资助项目(20082X10001-014);科技部技术创新基金资助项目(09C26221100138)
摘    要:通过调节量子阱中的In组分,制备了GaN基蓝光和绿光发光二极管(LED)。对两种LED进行变电流测试发现,注入电流由3 mA增加到900 mA过程中,波长有蓝移现象,且绿光LED的波长蓝移较明显。这是量子阱限制斯塔克效应(QCSE)造成的。由于绿光LED中In组分含量较大,QCSE较明显。并且发现,光效迅速下降,绿光L...

关 键 词:发光二极管(LED)  氮化镓(GaN)  蓝移  光效  量子阱限制斯塔克效应(QCSE)  无效注入

Effects of injection current on optical characteristics of GaN-based power LED
CUI De-sheng,GUO Wei-ling,CUI Bi-feng,YAN Wei-wei and LIU Ying.Effects of injection current on optical characteristics of GaN-based power LED[J].Journal of Optoelectronics·laser,2011(9):1309-1312.
Authors:CUI De-sheng  GUO Wei-ling  CUI Bi-feng  YAN Wei-wei and LIU Ying
Affiliation:Key Laboratory of Optoelectronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;Key Laboratory of Optoelectronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;Key Laboratory of Optoelectronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;Key Laboratory of Optoelectronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;Key Laboratory of Optoelectronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China
Abstract:GaN-based light emitting diodes(LEDs) with different In contents in the wells were fabricated.The blue-shift of the LED which comes from the quantum confinement Stark effect(QCSE) is observed when the driving current rangfes from 3 mA to 900 mA.And the blue-shift of the green LED is greater than that of the blue LED as the injection current varies,because the greater In contents in quantum well of green LED determines obvious quantum confinement Stark effect.The luminous efficiency is seriously ...
Keywords:light emitting diode(LED)  GaN  blue-shift  luminous efficiency  quantum confinement Stark effect(QCSE)  invalid injection
本文献已被 CNKI 等数据库收录!
点击此处可从《光电子.激光》浏览原始摘要信息
点击此处可从《光电子.激光》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号