| 背照式AlGaN/GaN基PIN日盲型紫外探测器的研制 |
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| 引用本文： | 邵会民,张世林,谢生,李献杰,尹顺正,蔡道民,毛陆虹.背照式AlGaN/GaN基PIN日盲型紫外探测器的研制[J].光电子．激光,2011(7):984-986. |
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| 作者姓名： | 邵会民 张世林 谢生 李献杰 尹顺正 蔡道民 毛陆虹 |
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| 作者单位： | 天津大学电子信息工程学院；;天津大学电子信息工程学院；;天津大学电子信息工程学院；;中国电子科技集团公司第13研究所；;中国电子科技集团公司第13研究所；;中国电子科技集团公司第13研究所；;天津大学电子信息工程学院； |
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| 基金项目： | 国家自然科学基金重点资助项目(61036602);天津市基础研究重点资助项目(09JCZDJC16600) |
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| 摘 要： | 利用MOCVD方法在蓝宝石（0001）衬底上生长PIN型AlGaN/GaN外延材料,研制出背照式AlGaN基PIN日盲型紫外探测器,用紫外光谱测试系统和半导体参数测试仪分别测得了器件的光谱响应和I-V特性曲线。测试结果表明,器件的响应范围为260~280 nm,峰值响应出现在270 nm处,在2.5 V偏压下的最大响应...
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| 关 键 词： | AlGaN 日盲 光谱响应率 紫外探测器 |
Research of AlGaN/GaN PIN solar-blind ultraviolet photodetector with back-illumination |
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| SHAO Hui-min,ZHANG Shi-lin,XIE Sheng,LI Xian-jie,YIN Shun-zheng,CAI Dao-min and MAO Lu-hong.Research of AlGaN/GaN PIN solar-blind ultraviolet photodetector with back-illumination[J].Journal of Optoelectronics·laser,2011(7):984-986. |
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| Authors: | SHAO Hui-min ZHANG Shi-lin XIE Sheng LI Xian-jie YIN Shun-zheng CAI Dao-min and MAO Lu-hong |
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| Affiliation: | School of Electronic Information Engineering.Tianjin University,Tianjin 300072,China;;School of Electronic Information Engineering.Tianjin University,Tianjin 300072,China;;School of Electronic Information Engineering.Tianjin University,Tianjin 300072,China;;13th Institute of China Electronic Technology Group Corporation,Shijiazhuang 050051,China;13th Institute of China Electronic Technology Group Corporation,Shijiazhuang 050051,China;13th Institute of China Electronic Technology Group Corporation,Shijiazhuang 050051,China;School of Electronic Information Engineering.Tianjin University,Tianjin 300072,China; |
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| Abstract: | The growth,fabrication and characteristics of AlGaN/GaN PIN solar-blind ultraviolet photodetectors with back-illumination are reported.The spectral responsivity and current-voltage characteristics of photodetectors were measured by the ultraviolet spectroscopy testing system and Keithley 4 200 semiconductor characterization system,respectively.The peak responsivity of photodetectors is about 0.055 A/W at 270 nm under 2.5 V reverse bias voltage.The dark current of the 1 500 μm-diameter devices is measured to be about 25 pA under-0.3 V bias voltage.Additionally,the turn-on and the breakdown voltages are about 1.6 V and 16 V,respectively.With a 2.5 V bias applied,the corresponding normalized detectivity (D) determined is 4.6×1011 cm·Hz1/2·W-1. |
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| Keywords: | AlGaN solar-blind spectral responsivity ultraviolet photodetector |
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