| 退火温度对ZnO掺杂ITO薄膜性能的影响 |
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| 引用本文： | 闫其昂,石培培,严启荣,牛巧利,章勇.退火温度对ZnO掺杂ITO薄膜性能的影响[J].光电子．激光,2012(3):512-517. |
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| 作者姓名： | 闫其昂 石培培 严启荣 牛巧利 章勇 |
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| 作者单位： | 华南师范大学光电子材料与技术研究所;华南师范大学光电子材料与技术研究所;华南师范大学光电子材料与技术研究所;华南师范大学光电子材料与技术研究所;华南师范大学光电子材料与技术研究所 |
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| 基金项目： | 国家自然科学基金(10904042);教育部留学回国人员科研启动基金(20091001);广东省自然科学基金(8521063101000007)资助项目 |
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| 摘 要： | 利用电子束蒸镀方法,在K8玻璃衬底上沉积ZnO掺杂ITO(ZnO-ITO)与ITO薄膜。研究不同退火温度对ZnO-ITO薄膜的微观结构的影响;对比分析了在不同退火温度条件下,ZnO-ITO和无掺杂ITO薄膜的光电性能。结果发现,ZnO-ITO薄膜具有较大的晶粒尺寸,随着退火温度的上升,晶体结构得到改善,表面粗糙度减小,薄膜的光电性能显著提高。ZnO-ITO薄膜经过500℃退火后得到最佳的综合性能,其表面均方根粗糙度(RMS)为32.52nm,电阻率为1.43×10-4Ω.cm;对442nm波长的光,透射率可达98.37%;与ITO薄膜相比,ZnO-ITO薄膜具有显著的抗PEDOT:PSS溶液腐蚀的能力。
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| 关 键 词： | ZnO掺杂ITO(ZnO-ITO)薄膜 电子束蒸发 退火温度 |
Influence of annealing temperature on properties of ZnO-doped ITO films |
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| YAN Qi-ang,SHI Pei-pei,YAN Qi-rong,NIU Qiao-li and ZHANG Yong.Influence of annealing temperature on properties of ZnO-doped ITO films[J].Journal of Optoelectronics·laser,2012(3):512-517. |
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| Authors: | YAN Qi-ang SHI Pei-pei YAN Qi-rong NIU Qiao-li and ZHANG Yong |
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| Affiliation: | Institute of Optoelectronic Materials and Technology,South China Normal University,Guangzhou 510631,China;Institute of Optoelectronic Materials and Technology,South China Normal University,Guangzhou 510631,China;Institute of Optoelectronic Materials and Technology,South China Normal University,Guangzhou 510631,China;Institute of Optoelectronic Materials and Technology,South China Normal University,Guangzhou 510631,China;Institute of Optoelectronic Materials and Technology,South China Normal University,Guangzhou 510631,China |
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| Abstract: | ZnO-doped indium tin oxide(ZnO:ITO) and undoped ITO thin films were deposited on the ultrasonically cleaned K8 glass substrates by the electron-beam evaporation technique.The effect of annealing temperature on the microstructure of ZnO-ITO thin films was investigated.The electrical and optical properties of ZnO-ITO and undoped ITO thin films have been contrastively analyzed.It is found that ZnO-ITO thin films show larger grain size and the crystalline structures become better;At the same time,the surface roughness gets lower with increasing annealing temperature.Further,the electrical and optical properties of ZnO-ITO thin films are remarkably improved.ZnO-ITO thin films annealed at 500 ℃ reveal the best comprehensive properties,including a root mean square roughness of 32.52 nm,a resistivity of 1.43×10-4 Ω·cm and a transmittance of 98.37 % at 442 nm.Compared with undoped ITO films,the ZnO-ITO films show remarkable erosion-resisting ability to PEDOT:PSS. |
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| Keywords: | ZnO-doped ITO films electron-beam evaporation annealing temperature |
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