| Al掺杂ZnO纳米棒的性能研究及其在太阳能电池中的应用 |
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| 引用本文： | 丁国静,秦文静,杨利营,黄康,印寿根.Al掺杂ZnO纳米棒的性能研究及其在太阳能电池中的应用[J].光电子．激光,2012(9):1786-1791. |
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| 作者姓名： | 丁国静 秦文静 杨利营 黄康 印寿根 |
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| 作者单位： | 显示材料与光电器件教育部重点实验室天津理工大学;天津市光电显示材料与器件重点实验室天津理工大学;显示材料与光电器件教育部重点实验室天津理工大学;天津市光电显示材料与器件重点实验室天津理工大学;显示材料与光电器件教育部重点实验室天津理工大学;天津市光电显示材料与器件重点实验室天津理工大学;显示材料与光电器件教育部重点实验室天津理工大学;天津市光电显示材料与器件重点实验室天津理工大学;显示材料与光电器件教育部重点实验室天津理工大学;天津市光电显示材料与器件重点实验室天津理工大学 |
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| 基金项目： | 天津市科技创新体系及条件平台建设计划(10SYSYJC28100);天津市应用基础及前沿技术研究计划(青年基金项目12JCQNJC01300);天津市高等学校科技发展基金计划(20100723)资助项目 |
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| 摘 要： | 通过水热法制备了不同质量分数(0%,0.5%,1.0%和1.5%)的Al 3+掺杂ZnO纳米棒,扫描电镜(SEM)、X射线衍射(XRD)、紫外-可见(UV-vis)吸收光谱等测试结果表明,通过这种方法得到了较为规整的ZnO纳米阵列,结晶良好、具有明显的c轴生长取向;掺杂浓度的增加对产物的形貌和晶体结构产生了明显的影响。通过瞬态光谱和面电阻测试发现,Al 3+掺杂提高了ZnO传导电子的能力。将Al 3+掺杂的ZnO纳米棒同时作为电极与电子传输层,应用于有机太阳能电池器件中,在低浓度(0.5at.%)掺杂时得到最佳的器件性能,相比于未掺杂的ZnO纳米棒,短路电流提高了30%,光电转化效率提高了50%。
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| 关 键 词： | Al3+掺杂ZnO纳米棒 光电性能 有机太阳能电池 |
Properties of Al-doped ZnO nanorods and the application in organic photovoltaic devices |
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| DING Guo-jing,QIN Wen-jing,YANG Li-ying,YIN Shou-gen and YIN Shou-gen.Properties of Al-doped ZnO nanorods and the application in organic photovoltaic devices[J].Journal of Optoelectronics·laser,2012(9):1786-1791. |
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| Authors: | DING Guo-jing QIN Wen-jing YANG Li-ying YIN Shou-gen and YIN Shou-gen |
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| Affiliation: | Key Laboratory of Display Materials and Photoelectric Devices,Ministry of Education of China,Tianjin University of Technology,Tianjin 300384,China;Key Laboratory of Display Materials and Photoelectric Devices of the City of Tianjin,Tianjin University of Technology,Tianjin 300384,China;Key Laboratory of Display Materials and Photoelectric Devices,Ministry of Education of China,Tianjin University of Technology,Tianjin 300384,China;Key Laboratory of Display Materials and Photoelectric Devices of the City of Tianjin,Tianjin University of Technology,Tianjin 300384,China;Key Laboratory of Display Materials and Photoelectric Devices,Ministry of Education of China,Tianjin University of Technology,Tianjin 300384,China;Key Laboratory of Display Materials and Photoelectric Devices of the City of Tianjin,Tianjin University of Technology,Tianjin 300384,China;Key Laboratory of Display Materials and Photoelectric Devices,Ministry of Education of China,Tianjin University of Technology,Tianjin 300384,China;Key Laboratory of Display Materials and Photoelectric Devices of the City of Tianjin,Tianjin University of Technology,Tianjin 300384,China;Key Laboratory of Display Materials and Photoelectric Devices,Ministry of Education of China,Tianjin University of Technology,Tianjin 300384,China;Key Laboratory of Display Materials and Photoelectric Devices of the City of Tianjin,Tianjin University of Technology,Tianjin 300384,China |
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| Abstract: | We fabricated the ZnO nanorods with different Al3+-doped concentrations of 0%,0.5%,1.0% and 1.5 %,respectively.The morphology and the crystalline of Al-doped ZnO nanorods are investigated by using scanning electron microscope(SEM) and X-ray diffraction(XRD).The optical and electrical properties are researched by ultraviolet-visible(UV-VIS) absorption spectroscopy,time-resolved photoluminescence(TRPL) spectroscopy and sheet resistance.The analysis indicates that the ZnO nanorods are orderly arrayed and have good crystallinity.As the Al3+ doped concentration increasing,the conductivity of ZnO is improved and the electron transfer between donor and acceptor becomes faster.Finally,Al-doped ZnO nanorods are incorporated in the organic photovoltaic devices as both cathode and electron conductive layer.The optimized device(at lower doping of 0.5%) shows 30% higher Jsc and 50% higher photoelectric conversion efficiency(PCE) compared with the device without Al doping. |
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| Keywords: | Al3+-doped ZnO nanorod photoelectric properties organic photovoltaic device |
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