| 超微OLED的制备及其光电特性的研究 |
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| 引用本文： | 魏娜,熊凌昊,张民艳,林宏,魏斌. 超微OLED的制备及其光电特性的研究[J]. 光电子．激光, 2012, 0(10): 1876-1879 |
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| 作者姓名： | 魏娜 熊凌昊 张民艳 林宏 魏斌 |
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| 作者单位： | 上海大学新型显示技术及应用集成教育部重点实验室;上海大学材料科学与工程学院;上海大学新型显示技术及应用集成教育部重点实验室;上海大学材料科学与工程学院;上海大学新型显示技术及应用集成教育部重点实验室;上海大学材料科学与工程学院;上海大学新型显示技术及应用集成教育部重点实验室;上海大学材料科学与工程学院;上海大学新型显示技术及应用集成教育部重点实验室 |
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| 基金项目： | 国家自然科学基金(61136003);上海市教委重点(12ZZ091)资助项目 |
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| 摘 要： | 为了实现高亮度有机电致发光器件(OLED)及其尺寸的微型化,采用接触式光刻技术,通过真空热蒸镀制备了具有不同掩膜版结构的OLED。器件的结构为玻璃衬底/ITO/LiF/空穴传输层(HTL,NPD)/发光层(EML,0.5-0.6vol%Rubrene:Alq3)/电子传输层(ETL,Alq3)/阴极,其中LiF作为绝缘层。分别制得发光面积为45μm×2mm的微细器件和直径为44μm的微小器件。实验研究了其光电特性,结果表明,4.5μm×2.0mm微细器件的最大电流密度为7A/cm2,为44μm微小器件的最大电流密度为40A/cm2。
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| 关 键 词： | 有机电致发光二极管(OLED) 接触式光刻 超微 高亮度 |
Fabrication of tiny-size OLED and its optical and electrical properties |
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| WEI N,XIONG Ling-hao,ZHANG Min-yan,LIN Hong and WEI Bin. Fabrication of tiny-size OLED and its optical and electrical properties[J]. Journal of Optoelectronics·laser, 2012, 0(10): 1876-1879 |
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| Authors: | WEI N XIONG Ling-hao ZHANG Min-yan LIN Hong WEI Bin |
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| Affiliation: | Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University,Shanghai 200072,China;School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China;Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University,Shanghai 200072,China;School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China;Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University,Shanghai 200072,China;School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China;Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University,Shanghai 200072,China;School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China;Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University,Shanghai 200072,China |
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| Abstract: | In order to achieve high-luminance and tiny-size organic light-emitting diode(OLED),contact photolithography and vacuum thermal evaporation are adopted to fabricate OLEDs with different ITO masks:glass/ITO/LiF/hole transport layer(HTL,NPD)/light-emitting layer(EML,0.5-0.6 vol%Rubrene:Alq3)/electron transport layer(ETL,Alq3)/cathode,in which LiF is used as the insulating layer.We obtain a microfine device with a light-emitting area of 45 μm×2 mm and a tiny device with a diameter of 44 μm,which exhibit the maximum current density of 7 A/cm2 and 40 A/cm2,respectively. |
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| Keywords: | organic light-emitting diode(OLED) contact photolithography tiny-size high-luminance |
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