| 长波长PIN／HBT集成光接收机前端噪声分析 |
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| 引用本文： | 崇英哲.长波长PIN／HBT集成光接收机前端噪声分析[J].中兴通讯技术,2004,10(4):45-47. |
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| 作者姓名： | 崇英哲 |
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| 作者单位： | 北京邮电大学,北京,100876 |
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| 摘 要： | 文章研究磷化铟(InP)基异质结双极晶体管(HBT)和PIN光电二极管(PIN-PD)单片集成技术,利用器件的小信号等效电路详细计算了长波长PIN/HBT光电子集成电路(OEIC)光接收机前端等效输入噪声电流均方根(RMS)功率谱密度.分析表明:对于高速光电器件,当频率在100 MHz～2 GHz范围内时,基极电流引起的散粒噪声和基极电阻引起的热噪声起主要作用;频率大于5 GHz时,集电极电流引起的散粒噪声和基极电阻引起的热噪声起主要作用.在上述结论的基础上,文章最后讨论了在集成前端设计的过程中减小噪声影响的基本方法.
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| 关 键 词： | 光接收机前端 磷化铟基异质结双极晶体管 PIN光电探测器 噪声电流 功率谱密度 |
| 文章编号： | 1009-6868(2004)04-0045-03 |
| 修稿时间： | 2004年2月20日 |
Analysis of Noise in Long Wavelength PIN/HBT Integrated Photoreceiver Front-Ends |
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| CHONG Ying-zhe.Analysis of Noise in Long Wavelength PIN/HBT Integrated Photoreceiver Front-Ends[J].ZTE Communications,2004,10(4):45-47. |
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| Authors: | CHONG Ying-zhe |
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| Abstract: | The Root Mean Square (RMS) power spectral density of equivalent input noise currents from the small-signal model of InP-based PIN/HBT monolithically integrated photoreceiver front-ends is calculated in this paper. The result demonstrates that, for different kinds of high-speed photoelectric devices, the base current shot noise and base resistance thermal noise dominate in the frequency range of 100 MHz to 2 GHz, and both collector current shot noise and base resistance thermal noise are critical for frequencies beyond 5 GHz. Finally, based on the above analysis, the fundamental design rules are discussed to minimize the noise in integrated front-ends. |
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| Keywords: | photoreceiver front-end InP-based HBT PIN photodetector noise current power spectral density |
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