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CMOS集成混频器噪声模型的计算机仿真与分析
引用本文:李俊宏. CMOS集成混频器噪声模型的计算机仿真与分析[J]. 微电子学, 2004, 34(5): 514-518
作者姓名:李俊宏
作者单位:新南威尔士大学,电子电气工程学院,澳大利亚,悉尼
摘    要:根据Hspice仿真结果,分析了CMOS集成混频器中场效应管的闪烁噪声和寄生电容产生输出噪声的详细过程。通过改变电路仿真参数,得出相应的仿真数据,结合理论模型对实验数据进行了分析。结果表明,由闪烁噪声引起的直接开关噪声增益随本振幅度递减,由寄生电容引起的间接开关噪声增益随寄生电容值和本振频率递增。

关 键 词:CMOS 混频器 Spice仿真 闪烁噪声 寄生电容 噪声增益
文章编号:1004-3365(2004)05-0514-05

Computer Simulation and Analysis of the Noise Model for CMOS Integrated Mixer
LI Jun-hong. Computer Simulation and Analysis of the Noise Model for CMOS Integrated Mixer[J]. Microelectronics, 2004, 34(5): 514-518
Authors:LI Jun-hong
Abstract:Based on the results of the Hspice simulation, the process of output noise induced by flicker noise and parasitic capacitor in CMOS integrated mixer is analyzed in detail.Relevant simulation data are obtained by varying parameters of the circuit, and the experimental data are analyzed using a theoretical model.Results indicate that the direct switching noise induced by flicker noise decreases as LO amplitude increases, and the direct switching noise caused by parasitic capacitor increases with the value of parasitic capacitor and LO frequency.
Keywords:CMOS  Mixer  SPICE simulation  Flicker noise  Parasitic capacitor  Noise gain
本文献已被 CNKI 维普 万方数据 等数据库收录!
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