MOS器件在不同源辐照下总剂量效应的异同性研究

介绍了加固型CMOS电路在^60Co—γ射线源、10MeV以下的质子、1～2MeV的电子等辐射源辐照下的总剂量效应实验。结果表明，在相同吸收剂量和 5V栅压的偏置条件下，1MeV的电子与^60Co—γ射线源对器件的损伤相当。质子与^60Co-γ射线源对器件的辐射损伤，在不同的栅压偏置下有不同的结果。 5V栅压下，能量在10MeV以下的质子对器件的损伤小于^60Co-γ射线源，且质子对器件的辐射损伤随着质子能量的增加而增加；在零栅压的偏置条件下，质子对器件的损伤与^60Co-γ射线源对器件的损伤相当。通过对实验结果的分析认为，用实验室常用的^60Co-γ射线源可以模拟MOS器件在质子、电子辐射环境下的最劣总剂量效应。

A Comparison of Ionizing Radiation Effects in MOSFET from Different Radiation Sources

Radiation-hardened CMOS transistors were irradiated with ()~(60)Co gamma rays,2-7 MeV protons and 1-2 MeV electrons to determine the correlation between the radiation effects of ()~(60)Co gamma rays and the protons, and between ()~(60)Co gamma rays and electrons. Results show that, for equally absorbed dose, the damage of CMOS devices irradiated with protons was less than ()~(60)Co gamma rays with the devices under bias condition. But under zero gate bias condition, the damage resulted from these two radiation sources were equivalent. Comparison of total dose effects of electrons and ()~(60)Co gamma rays on CMOS devices indicated that the damage was equivalent under bias condition.