90 nm PDSOI MOSFET热阻研究

对90 nm PDSOI MOSFET的热阻进行了提取与研究。以H型栅MOSFET为研究对象,将源体二极管作为温度敏感器,通过测量源体结电流与器件温度的关系以及源体结电流与器件功率的关系,获得MOS器件功率与器件温度的关系,从而获取MOS器件热阻值。实验结果表明,该工艺下PMOS器件的热阻比NMOS器件大,其原因是PMOS体区掺杂浓度比NMOS高,而掺杂浓度越高,导热性越差,热阻就越大；H型栅器件的归一化热阻随沟道宽度的增加而增大,其原因是随着沟道宽度的增加,体引出区域对器件导热的贡献变小；热阻随环境温度的上升而减小,其原因是二氧化硅埋氧层的导热率随温度的升高而增大。

Study on Thermal Resistance of 90 nm PDSOI MOSFETs

The thermal resistance of the 90 nm H-gate PDSOI MOSFET was investigated. The source-body diode was used as the thermometer, and the thermal resistance was obtained by measuring the relationship between the junction current and temperature, and the relationship between the junction current and MOS device power. The experimental results showed that the thermal resistance of the PMOS was larger than that of the NMOS in this technology. The reason was that the doping concentration in the body region of the PMOS was higher than that of the NMOS, and the thermal resistance increased with the increase of the doping concentration. Due to the contribution of the body-tied region to the heat conduction was decreased, the normalized thermal resistance of the H-gate device increased with the increase of the channel width. Since the thermal conductivity of SiO₂ increased with temperature, the thermal resistance decreased with the increasing ambient temperature.