一种新型低功耗加固SRAM存储单元

提出了一种抗辐射加固12T SRAM存储单元。采用NMOS管组成的堆栈结构降低功耗,利用单粒子翻转特性来减少敏感节点,获得了良好的可靠性和低功耗。Hspice仿真结果表明,该加固SRAM存储单元能够完全容忍单点翻转,容忍双点翻转比例为33.33%。与其他10种存储单元相比,该存储单元的面积开销平均增加了3.90%,功耗、读时间和写时间分别平均减小了34.54%、6.99%、26.32%。电路静态噪声容限大且稳定性好。

A Novel Low Power Radiation Hardened SRAM Memory Cell

A radiation hardened 12T SRAM memory cell was presented. The stack structure composed of NMOS tubes was adopted to reduce power consumption, and the single event upset characteristic was used to reduce sensitive nodes, thus achieving good reliability and low power consumption. Hspice simulation results showed that the proposed memory cell could fully tolerate single node upset, and partially tolerate double node upset with a ratio of 33.33%. Compared with other ten memory cells, the area overhead of the proposed memory cell was increased by 3.90% on average, and the power consumption, read time and write time were reduced by 34.54%, 6.99% and 26.32% on average. The circuit had a large static noise margin with good stability.