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用于植入式心电监测的12位低功耗SAR ADC
引用本文:王冰,姜汉钧,郭衍束,王志华.用于植入式心电监测的12位低功耗SAR ADC[J].微电子学,2018,48(6):728-732, 737.
作者姓名:王冰  姜汉钧  郭衍束  王志华
作者单位:清华大学 微电子所, 北京 100084,清华大学 微电子所, 北京 100084,清华大学 深圳研究院, 广东 深圳 518057,清华大学 微电子所, 北京 100084
基金项目:国家自然科学基金资助项目(61661166010,61474070,61431166002);苏州-清华创新引领专项项目(2016SZ0214);深圳市科技计划项目(JCYJ20160608154932084)
摘    要:设计并实现了一个用于植入式心电监测的12位低功耗逐次逼近型模数转换器(SAR ADC)。针对低功耗的应用需求,提出了一种静态预放大比较器与动态预放大比较器分时工作的时分比较方案,在保证比较精度的基础上实现了低功耗。针对低采样率时的漏电问题,采用了异步自控制逻辑、双电源电压供电和晶体管的最小栅长堆叠等方法,降低了漏电功耗。设计的ADC采用65 nm CMOS工艺实现。仿真结果表明,采样率为1 kS/s时,信噪失真比SNDR在各工艺角下均不小于69.9 dB,有效位数为11.3位,功耗仅为30 nW,漏电功耗占总功耗的11%,性能优值FoM为11.8 fJ/(conv·step)。

关 键 词:动态预放大比较器    静态预放大比较器    逐次逼近型ADC    心电监测
收稿时间:2018/2/9 0:00:00

A 12 bit Low Power SAR ADC for Implantable ECG Monitoring
WANG Bing,JIANG Hanjun,GUO Yanshu and WANG Zhihua.A 12 bit Low Power SAR ADC for Implantable ECG Monitoring[J].Microelectronics,2018,48(6):728-732, 737.
Authors:WANG Bing  JIANG Hanjun  GUO Yanshu and WANG Zhihua
Affiliation:Institute of Microelectronics, Tsinghua University, Beijing 100084, P.R.China,Institute of Microelectronics, Tsinghua University, Beijing 100084, P.R.China,Research Institute of Tsinghua at Shenzhen, Shenzhen, Guangdong 518057, P.R.China and Institute of Microelectronics, Tsinghua University, Beijing 100084, P.R.China
Abstract:An ultra-low power 12-bit successive-approximation-register(SAR) ADC was designed for implantable electrocardiography(ECG) monitoring. In order to meet the requirements of low power consumption, a time-division comparison scheme with static pre-amplification comparators and dynamic pre-amplification comparators working at different timing was proposed. Low power was achieved on the basis of satisfying the comparison accuracy by the proposed scheme. In addition, the techniques such as asynchronous self-controlled logic operating, dual-voltage power supplying and transistors minimum gate length stacking were utilized to reduce the leakage current. This ADC was implemented in a 65 nm CMOS process. The simulation results showed that, at a sampling rate of 1 kS/s, the SNDR was more than 69.9 dB at different corners, the corresponding effective number of bit(ENOB) was 11.3 bit, and the power consumption was only 30 nW. The leakage consumption occupied 11% of the total power consumption. Thus the figure-of-merit(FoM) was 11.8 fJ/(conv·step).
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