| 一种用于NAND闪存的奇偶位线块编程补偿算法 |
| |
| 引用本文： | 门顶顶,曹华敏,王颀,霍宗亮.一种用于NAND闪存的奇偶位线块编程补偿算法[J].微电子学,2018,48(4):500-503. |
| |
| 作者姓名： | 门顶顶 曹华敏 王颀 霍宗亮 |
| |
| 作者单位： | 中国科学院大学, 北京 100049;中国科学院物联网研究发展中心, 江苏 无锡 214135,中国科学院大学, 北京 100049;中国科学院微电子研究所,北京 100029,中国科学院大学, 北京 100049;中国科学院微电子研究所,北京 100029,中国科学院大学, 北京 100049;中国科学院微电子研究所,北京 100029 |
| |
| 基金项目： | 国家自然科学基金资助项目(61474137,61404168) |
| |
| 摘 要： | 为改善数据保持干扰和编程干扰对NAND闪存可靠性的影响,提出了一种新的奇偶位线块编程补偿算法。该算法利用编程干扰效应来补偿由数据保持引起的阈值漂移,修复NAND闪存因数据保持产生的误码,提高了NAND闪存的可靠性。将该算法应用于编程擦除次数为3k次的1x-nm MLC NAND闪存。实验结果表明,在数据保持时间为1年的条件下,与传统奇偶交叉编程算法相比,采用该补偿算法的NAND闪存的误码降低了93%；与读串扰恢复算法相比,采用该补偿算法的NAND闪存的误码下降了38%。
|
| 关 键 词： | NAND闪存 数据保持 编程干扰 阈值漂移补偿 可靠性 |
| 收稿时间： | 2017/10/31 0:00:00 |
An Even-Odd BL Chucks Programming Compensation Algorithm Applied in NAND Flash |
| |
| MEN Dingding,CAO Huamin,WANG Qi and HUO Zongliang.An Even-Odd BL Chucks Programming Compensation Algorithm Applied in NAND Flash[J].Microelectronics,2018,48(4):500-503. |
| |
| Authors: | MEN Dingding CAO Huamin WANG Qi and HUO Zongliang |
| |
| Affiliation: | University of Chinese Academy of Sciences, Beijing 100049, P.R.China;CAS R&D Center for Internet of things, Chinese Academy of Sciences, Wuxi, Jiangsu 214135, P.R.China,University of Chinese Academy of Sciences, Beijing 100049, P.R.China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P.R.China,University of Chinese Academy of Sciences, Beijing 100049, P.R.China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P.R.China and University of Chinese Academy of Sciences, Beijing 100049, P.R.China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P.R.China |
| |
| Abstract: | A novel programming compensation algorithm based on even-odd BL chunks was proposed according to the failure mechanism of data retention and program disturbance. The proposed algorithm used program disturbance to compensate the threshold shift caused by data retention. As a result, the error bits induced by data retention could be corrected and the reliability of NAND flash memories could be improved. The algorithm was applied in 1x-nm MLC NAND flash memories with 3k program-erase (PE) cycling. The experimental results showed that this compensation algorithm could reduce 93% of the bit errors in NAND flash memory when the data retention time was one year. Compared with the algorithm that used the read crosstalk, the proposed programming compensation algorithm could reduce 38% of error bits. |
| |
| Keywords: | |
|
| 点击此处可从《微电子学》浏览原始摘要信息 |
|
点击此处可从《微电子学》下载全文 |
|
