| 一种具有高电源抑制比的低功耗CMOS带隙基准电压源 |
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| 引用本文： | 汪宁,魏同立.一种具有高电源抑制比的低功耗CMOS带隙基准电压源[J].微电子学,2004,34(3):330-333. |
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| 作者姓名： | 汪宁 魏同立 |
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| 作者单位： | 东南大学,微电子中心,江苏,南京,210096 |
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| 摘 要： | 文章设计了一种适用于CMOS工艺的带隙基准电压源电路，该电路采用工作在亚阈值区的电路结构，并采用高增益反馈回路，使其具有低功耗、低电压、高电源电压抑制比和较低温度系数等特点。
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| 关 键 词： | CMOS 带隙基准电压源 亚阈值 低功耗 低电压 电源抑制比 |
| 文章编号： | 1004-3365(2004)03-0330-04 |
A Low-Power High PSRR CMOS Bandgap Voltage Reference |
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| WANG Ning,WEI Tong-li.A Low-Power High PSRR CMOS Bandgap Voltage Reference[J].Microelectronics,2004,34(3):330-333. |
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| Authors: | WANG Ning WEI Tong-li |
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| Abstract: | A bandgap voltage reference circuit suitable for digital CMOS process is presented in the paper. Using MOSFET operating in subthreshold region and a high gain feedback loop, the bandgap voltage reference has high power supply rejection ratio (PSRR) and low-temperature coefficient. The circuit can be used in low-power and low-voltage analog circuits. |
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| Keywords: | CMOS Bandgap voltage reference Subthreshold Low-power Low-voltage Power supply rejection ratio |
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