首页 | 本学科首页   官方微博 | 高级检索  
     

半导体脉冲功率开关RSD的开通电压特性研究
引用本文:杜如峰,余岳辉,彭昭廉,李焕炀,胡乾.半导体脉冲功率开关RSD的开通电压特性研究[J].微电子学,2004,34(2):195-197,202.
作者姓名:杜如峰  余岳辉  彭昭廉  李焕炀  胡乾
作者单位:华中科技大学,电子科学与技术系,湖北,武汉,430074
基金项目:国家自然科学基金资助项目(50277016)
摘    要:RSD(Reversely Switched Dynistor)是一种晶闸管与晶体管相间排列的多元胞结构高速大功率半导体开关器件,该器件采用控制等离子体层触发的开通模式。文章从理论上推导出其最大开通电压,并研完了该电压与器件结构参数之间的关系,给出了降低器件功耗的方法。

关 键 词:半导体脉冲功率开关  RSD  开通电压  等离子体层触发  晶闸管  晶体管
文章编号:1004-3365(2004)02-0195-03

A Study on Turning-on Voltage Characteristics of RSD's
DU Ru-feng,YU Yue-hui,PENG Zhao-lian,LI Huan-yang,HU Qian.A Study on Turning-on Voltage Characteristics of RSD''''s[J].Microelectronics,2004,34(2):195-197,202.
Authors:DU Ru-feng  YU Yue-hui  PENG Zhao-lian  LI Huan-yang  HU Qian
Abstract:RSD is a multi-cell high-speed power semiconductor switch consisting of thousands of alternating thyristors and transistor sections and triggered by an electron-hole plasma layer. The maximum turning-on voltage of the device is theoretically derived, and relations of the voltage with the structural parameters of the device are discussed. And finally, a method is proposed to reduce its power dissipation.
Keywords:Semiconductor switch  Power device  Reversely switched dynistor  Turning-on voltage
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号