| 一种K~D波段宽带射频MEMS开关设计 |
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| 引用本文： | 韩路路,吴倩楠,余建刚,王姗姗,王宇,李孟委.一种K~D波段宽带射频MEMS开关设计[J].微电子学,2021,51(6):894-899. |
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| 作者姓名： | 韩路路 吴倩楠 余建刚 王姗姗 王宇 李孟委 |
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| 作者单位： | 中北大学 南通智能光机电研究院, 江苏 南通 226000;中北大学 仪器与电子学院, 太原 030051;中北大学 前沿交叉科学研究院, 太原 030051;中北大学 微系统集成研究中心, 太原 030051;中北大学 南通智能光机电研究院, 江苏 南通 226000;中北大学 前沿交叉科学研究院, 太原 030051;中北大学 微系统集成研究中心, 太原 030051;中北大学 理学院, 太原 030051 |
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| 基金项目： | 国家自然科学基金资助项目(61705200)；装备发展部新品项目(2018NW0026,2019NW0010)；中北大学青年学术带头人项目(QX201905)。 |
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| 摘 要： | 针对卫星通信、电子对抗及微波测试系统对开关提出的宽带宽、低插损、低功耗的应用需求,设计了一种K~D波段宽带射频MEMS开关。通过优化衬底材料和十字型上电极结构提高开关的带宽,降低开关的损耗。利用HFSS电磁波仿真软件对开关的几何参数进行优化计算。结果表明,所设计的射频MEMS开关可工作在18~188 GHz的频带内,且插入损耗小于1.47 dB,隔离度大于20.12 dB,其整体体积约为0.75 mm3。此开关可与移相器、延时器、谐振器等结构集成,实现宽带且低损耗的射频可重构MEMS器件及系统,可用于新一代通信及微波测试等领域。
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| 关 键 词： | 宽带 射频MEMS开关 插入损耗 隔离度 可重构 |
| 收稿时间： | 2021/2/28 0:00:00 |
Design of a K~D Band Broadband RF MEMS Switch |
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| HAN Lulu,WU Qiannan,YU Jiangang,WANG Shanshan,WANG Yu,LI Mengwei.Design of a K~D Band Broadband RF MEMS Switch[J].Microelectronics,2021,51(6):894-899. |
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| Authors: | HAN Lulu WU Qiannan YU Jiangang WANG Shanshan WANG Yu LI Mengwei |
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| Affiliation: | Nantong Institute of Intelligent Opto-Mechatronics, North University of China, Nantong, Jiangsu 226000, P.R.China;School of Instrument and Electronics, North University of China, Taiyuan 030051, P.R.China;Academy for Advanced Interdisciplinary Research, North University of China, Taiyuan 030051, P.R.China;Center for Microsystem Intergration, North University of China, Taiyuan 030051, P.R.China;Nantong Institute of Intelligent Opto-Mechatronics, North University of China, Nantong, Jiangsu 226000, P.R.China;Academy for Advanced Interdisciplinary Research, North University of China, Taiyuan 030051, P.R.China;Center for Microsystem Intergration, North University of China, Taiyuan 030051, P.R.China;School of Science, North University of China, Taiyuan 030051, P.R.China |
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| Abstract: | In response to the application requirements of broadband width, low insertion loss and low power consumption of switches proposed by satellite communication, electronic countermeasures and microwave test systems, a wide band RF MEMS switch for the K~D band was designed. The bandwidth of the switch was improved and the loss of the switch was reduced by optimizing the substrate material and the cross-shaped upper electrode structure. The HFSS electromagnetic wave simulation software was used to optimize the geometric parameters of the switch. The results showed that the designed RF MEMS switch could work in the frequency band of 18~188 GHz, the insertion loss was less than 1.47 dB, the isolation was more than 20.12 dB, and its overall volume was about 0.75 mm3. This switch could be integrated with phase shifters, delay lines, resonators and other devices to realize broadband and low-loss RF reconfigurable MEMS devices and systems, which were used in the fields of next-generation communications and microwave testing. |
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| Keywords: | broadband RF MEMS switch insertion loss isolation reconfigurabl |
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