| SiGe HBT小信号等效电路的参数直接提取 |
| |
| 引用本文： | 温佐阳,王军.SiGe HBT小信号等效电路的参数直接提取[J].微电子学,2009,39(3). |
| |
| 作者姓名： | 温佐阳 王军 |
| |
| 作者单位： | 西南科技大学,信息工程学院,绵阳,621010 |
| |
| 摘 要： | 提出了一种求解硅锗异质结双极型晶体管(SiGe HBT)小信号等效电路模型的参数直接提取方法.整个提取过程使用由小信号等效电路推导出的一系列解析表达式,不使用任何数值优化方法.参数提取结果使用ADS软件仿真验证.结果表明,该方法简单易行,较为精确.
|
| 关 键 词： | 小信号模型 参数提取 |
Direct Extraction of Small-Signal Equivalent Circuit Model for SiGe HBTs |
| |
| WEN Zuoyang,WANG Jun.Direct Extraction of Small-Signal Equivalent Circuit Model for SiGe HBTs[J].Microelectronics,2009,39(3). |
| |
| Authors: | WEN Zuoyang WANG Jun |
| |
| Affiliation: | School of Information Engineering;Southwest University of Science and Technology;Mianyang;Sichuan 621010;P.R.China |
| |
| Abstract: | A direct parameter extraction method for small-signal equivalent-circuit model of Si-Ge heterojunction bipolar transistors(SiGe HBTs) was proposed.A set of analytical expressions,which were derived from small-signal equivalent-circuit without any numerical optimization,was used for parameter extraction.The extracted parameters were verified by ADS simulation,and results indicate that the proposed method features simplicity and accuracy. |
| |
| Keywords: | SiGe HBT |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
