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硅衬底上射频无源低通滤波器的设计及版图实现
引用本文:李小进,石艳玲,赖宗声,朱自强.硅衬底上射频无源低通滤波器的设计及版图实现[J].微电子学,2003,33(6):517-520.
作者姓名:李小进  石艳玲  赖宗声  朱自强
作者单位:华东师范大学,信息学院,上海,200062
基金项目:国家973项目(G1999033105),国家杰出青年基金(69975409),上海应用材料研究与发展基金(0103)资助
摘    要:文章系统地研究了微波无源低通滤波器的设计原理及其设计方法。根据网络综合法,设计出了一个—3dB截止频率为1.2GHz的2阶低通无源滤波器,其器件参数C1、L1、C2分别为2.56pF、13.252nH和2.56pF。采用自行设计的算法,编制了相应的Matlab程序,计算出滤波嚣的版图结构参数。最后,用ADS软件对该滤波器进行了版图级的模拟验证。结果表明,该微波无源滤波器的散射参数曲线与理想元件所组成的滤波器的散射曲线相吻合,且性能好,能够满足实际应用的需要。

关 键 词:硅衬底  射频无源低通滤波器  版图结构参数  ADS软件  散射曲线
文章编号:1004-3365(2003)06-0517-04
修稿时间:2002年12月23

Design of a Si-Based RF Passive Low-Pass Filter and Its Implementation
LI Xiao-jin,SHI Yan-ling,LAI Zong-sheng,ZHU Zi-qiang.Design of a Si-Based RF Passive Low-Pass Filter and Its Implementation[J].Microelectronics,2003,33(6):517-520.
Authors:LI Xiao-jin  SHI Yan-ling  LAI Zong-sheng  ZHU Zi-qiang
Abstract:Design theory and method for the microwave passive low-pass filter is investigated in the paper. A second-order low-pass filter has been designed based on the method. The transformation from the schematic-level to layout-level is completed using the software compiled by the author. With C_1, L_1, C_2 being 2.56 pF,13.252 nH and 2.56pF, respectively, the filter has a corner frequency of 1.2 GHz where the attenuation is -3 dB. Finally, a layout-level simulation is made for verification using ADS of Agilient, which shows that the microwave passive filter designed with the proposed method can meet requirements in practical applications.
Keywords:Microwave filter  Passive filter  Low-pass filter  Radio frequency IC
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