| 阻变存储器及其集成技术研究进展 |
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| 引用本文： | 左青云,刘明,龙世兵,王琴,胡媛,刘琦,张森,王艳,李颖弢.阻变存储器及其集成技术研究进展[J].微电子学,2009,39(4). |
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| 作者姓名： | 左青云 刘明 龙世兵 王琴 胡媛 刘琦 张森 王艳 李颖弢 |
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| 作者单位： | 中国科学院,微电子研究所,纳米加工与新器件集成技术实验室,北京,100029 |
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| 基金项目： | 国家高技术研究发展(863)计划基金资助项目，国家重点基础研究发展(973)计划基金资助项目，国家自然科学基金资助项目 |
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| 摘 要： | 在各种新型非挥发性存储器中,阻变存储器(RRAM)具有成为下一代存储器的潜力.介绍了RRAM器件的基本结构,分类总结了常用的材料以及制备工艺,对RRAM阵列的集成方案进行了比较,并讨论了目前存在的问题;最后,对RRAM的研究趋势进行了展望.
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| 关 键 词： | 非挥发性存储器 阻变存储器 电阻转变 |
Progress in Development of Resistive RAM and Its Integration Technology |
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| ZUO Qingyun,LIU Ming,LONG Shibing,WANG Qin,HU Yuan,LIU Qi,ZHANG Sen,WANG Yan,LI Yingtao.Progress in Development of Resistive RAM and Its Integration Technology[J].Microelectronics,2009,39(4). |
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| Authors: | ZUO Qingyun LIU Ming LONG Shibing WANG Qin HU Yuan LIU Qi ZHANG Sen WANG Yan LI Yingtao |
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| Affiliation: | Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology;Institute of Microelectronics;The Chinese Academy of Sciences;Beijing 100029;P.R.China |
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| Abstract: | Resistive random access memory(RRAM) is one of the most promising candidates for next generation of non-volatile memory.The basic structure of RRAM was described.Resistive switching materials and electrodes for RRAM were summarized,and their fabrication technologies were reviewed.Different techniques for integration of RRAM array were discussed and existing problems were analyzed.And finally,the research trend of RRAM was discussed. |
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